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Increase in Period of Oscillatory Coupling in Cu by Doping with Ni

Published online by Cambridge University Press:  03 September 2012

S.S.P. Parkin ,
C Chappertt  and
F. Herman
S.S.P. Parkin
Affiliation:
IBM Research Division, Almadén Research Center, 650 Harry Road, San Jose, C A 95120–6099.
C Chappertt
Affiliation:
Institut d'Rlectroniquc Fondamentale, Université Paris-Sud, Orsay, France.
F. Herman
Affiliation:
IBM Research Division, Almadén Research Center, 650 Harry Road, San Jose, C A 95120–6099.
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Abstract

The origin of oscillatory interlayer coupling via Cu is explored in sputtered Co/Cu Multilayers by varying the hole concentration in the copper layers by doping with elements of different valence. Detailed studies were carried out for a series of Cu-Ni alloys. The oscillation period of pure Cu is observed to increase monotonically with increasing Ni concentration and is almost doubled for 40 atomic % Ni. The increase in oscillation period can be accounted for by considering changes in the topology of (he Fermi surface of the alloy resulting from the change in band Tilling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 313: Symposium Q1 – Magnetic Ultrathin Films, Multilayers and Surfaces/Magnetic Interfaces-Physics and Characterizations , 1993 , 179
Copyright
Copyright © Materials Research Society 1993

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