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Incorporation of Sb, Bi, and Te Interlayers at the Mo/Cu-In-Ga Interface for the Reaction of Cu(In,Ga)(Se,S)2

Published online by Cambridge University Press:  28 August 2013

Kihwan Kim
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
Jaesung Han
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Republic of Korea
William N. Shafarman
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
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Abstract

In this work, we investigate the effects of Sb, Bi, or Te interlayers at the Mo/Cu-In-Ga interface on the reaction to form Cu(In,Ga)(Se,S)2 in order to control void formation and improve adhesion. Interlayers with 10 nm thickness were evaporated onto the Mo back contact prior to sputtering the metal precursors. CIGSS absorber layers were formed by a three-step H2Se/Ar/H2S reaction and solar cells were fabricated. The influences of each interlayer were characterized in the precursor and reacted films in terms of the density of the void formation, film structure and morphology, adhesion, and device performance.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Sugimoto, H., Yagioka, T., Nagahashi, M., Yasaki, Y., Kawaguchi, Y., Morimoto, T., Chiba, Y., Aramoto, T., Tanaka, Y., Hakuma, H., Kuriyagawa, S., and Kushiya, K., “Achievement of over 17% efficiency with 30x30cm2-sized Cu(InGa)(SeS)2submodules,” Conference Record of the 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 003420003423.Google Scholar
Kim, K., Hanket, G. M., Huynh, T., and Shafarman, W. N., “Three-step H2Se/Ar/H2S reaction of Cu-In-Ga precursors for controlled composition and adhesion of Cu(In, Ga)(Se, S)2 thin films,” Journal of Applied Physics, vol. 111, p. 083710, 2012.CrossRefGoogle Scholar
Yuan, M., Mitzi, D. B., Gunawan, O., Kellock, A. J., Chey, S. J., and Deline, V. R., “Antimony assisted low-temperature processing of CuIn1-xGaxSe2-ySy solar cells,” Thin Solid Films, vol. 519, pp. 852856, 2010.CrossRefGoogle Scholar
Nakada, T., Honishi, Y., Yatsushiro, Y., and Nakakoba, H., “Impacts of Sb and Bi incorporations on CIGS thin films and solar cells,” Conference Record of the 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 003527003531.Google Scholar
Basol, B. M., Kapur, V. K., and Matson, R. J., “Control of CuInSe2 film quality by substrate surface modifications in a two-stage process,” Conference Record of the 22nd IEEE Photovoltaic Specialists Conference (PVSC), 1991, pp. 11791184.Google Scholar
Kim, K., Park, H., Kim, W. K., Hanket, G. M., and Shafarman, W. N., “Effect of Reduced Cu(InGa)(SeS)2 Thickness Using Three-Step H2Se/Ar/H2S Reaction of Cu-In-Ga Metal Precursor,” IEEE Journal of Photovoltaics, vol. 3, pp. 446450, 2013.CrossRefGoogle Scholar