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Incorporation of Nitrogen Atoms at Si/SiO2 Interfaces of Field Effect Transistors (FETs) to Improve Device Reliability

Published online by Cambridge University Press:  15 February 2011

G. Lucovsky ,
D. R. Lee ,
Z. Jing ,
J. L. Whitten ,
C. Parker  and
J. R. Hauser
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
D. R. Lee
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
Z. Jing
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
J. L. Whitten
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
C. Parker
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
J. R. Hauser
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
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Abstract

Incorporation of N-atoms at the Si-Si02 interface in field effect transistors, FETs, with ultrathin dielectrics (≤ 5.5 nm) improves device reliability. Four aspects of our recent research on nitrided Si-Si02 interfaces are discussed in this paper: i) the low-temperature/low-thermal budget process by which interface chemistry is controlled, and optimized; ii) the use of on-line and off-line diagnostics to determine the spatial confinement and concentration of interfacial N-atom incorporation; iii) comparisons of device properties for non-nitrided and nitrided interfaces; and iv) the proposal of an atom-scale model for the role that interfacial N-atoms play in improving device reliability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 321
Copyright
Copyright © Materials Research Society 1996

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