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Incorporation of Na in Low-Temperature Deposition of CIGS Flexible Solar Cells

Published online by Cambridge University Press:  31 January 2011

Hendrik Zachmann ,
Stefan Puttnins ,
Felix Daume ,
Andreas Rahm ,
Karsten Otte ,
Raquel Caballero ,
Christian A. Kaufmann ,
Tobias Eisenbarth  and
H.W. Schock
Hendrik Zachmann
Affiliation:
[email protected], Solarion AG, Leipzig, Germany
Stefan Puttnins
Affiliation:
[email protected], Solarion AG, Leipzig, Germany
Felix Daume
Affiliation:
[email protected], Solarion AG, Leipzig, Germany
Andreas Rahm
Affiliation:
[email protected], Solarion AG, Leipzig, Germany
Karsten Otte
Affiliation:
[email protected], Solarion AG, Leipzig, Germany
Raquel Caballero
Affiliation:
[email protected], Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany
Christian A. Kaufmann
Affiliation:
[email protected], Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany
Tobias Eisenbarth
Affiliation:
[email protected], Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany
H.W. Schock
Affiliation:
[email protected], United States
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Abstract

Different methods for Na incorporation are known for the use of Na-free substrates like stainless steel or polyimide foil. In this work Cu(In,Ga)Se2 (CIGS) absorber layers with different amounts of Na are investigated. The CIGS samples were prepared via a roll-to-roll deposition process with ion beam assistance (Solarion) and by a multi-stage low temperature co-evaporation process (HZB). Na was either incorporated via in-situ co-evaporation of NaF (for roll-to-roll deposition) or by a Na-containing precursor (for multi-stage deposition). With increasing amounts of Na an increase of VOC is observed for both deposition tech-niques. In contrast, within the deposition parameters used, jSC decreases with increasing Na amount for co-evaporation of NaF while it seems unaffected when using a NaF precursor layer. The elemental depth profiles of the different CIGS thin films were studied via secondary ion mass spectroscopy and were found to depend strongly on the deposition technique. It seems that beneficial effects of the addition of Na are independent of the method of in-corporation, even if the distribution of Na in the CIGS layer is different due to different methods of incorporation and CIGS deposition processes.

Keywords

crystal growthNaphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1210: Symposium Q – Photovoltaic Materials and Manufacturing Issues II , 2009 , 1210-Q03-02
Copyright
Copyright © Materials Research Society 2010

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References

1 Granath, K. et al., Solar Energy Materials & Solar Cells. 60/3, 279 (2000).Google Scholar
2 Niles, D.W. et al., J. Vac. Sci. Technol. A 15, 3044 (1997).Google Scholar
3 Contreras, M.A. et al, 26th IEEE Photovoltaic Specialist Conf. 1997, p. 359.Google Scholar
4 Cahen, D. et al., 5th International Symposium for Uses of Se and Te, p. 207 (1994).Google Scholar
5 Caballero, R. et al., Thin Solid Films 517, 2187–2190 (2009).Google Scholar
6 Caballero, R. et al., Mater. Res. Soc. Symp. Proc. 1165, San Francisco M02-10, (2009).Google Scholar
7 Rudmann, D. et al., J. Appl. Phys. 97, 084903 (2005).Google Scholar
8 Kaufmann, C.A. et al., Solar Energy Materials & Solar Cells 93, 859 (2009).Google Scholar
9 Zachmann, H. et al., Proceedings of 23rd EU-PVSEC (2009).Google Scholar
10 Caballero, R. et al., Phys. Status Solidi A 206/5, 1049 (2009).Google Scholar
11 Eisenbarth, T. et al., to be published in J. Appl. Phys.Google Scholar
12 Rudmann, D. PhD-thesis, Zürich (2004)Google Scholar
13 Niemegeers, A. et al., J. Appl. Phys. 81, 2881 (1997).Google Scholar
14 Rudmann, D. et al. Appl. Phys. Lett., 84, 1129 (2004).Google Scholar
15 Kaufmann, C.A. et al., Proceedings of 34th IEEE PVSC (2009).Google Scholar
16 Nadenau, V. et al., J. of Cryst. Growth 233, 13 (2001).Google Scholar