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Incoherent Light Annealing of Selectively Implanted GaAs for Mesfet Applications

Published online by Cambridge University Press:  25 February 2011

S.A. Kitching ,
M.H. Badawi ,
S.W. Bland  and
J. Mun
S.A. Kitching
Affiliation:
Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England
M.H. Badawi
Affiliation:
Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England
S.W. Bland
Affiliation:
Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England
J. Mun
Affiliation:
Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England
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Abstract

Capped and capless incoherent light annealing of high and low dose silicon implants into GaAs have been compared with conventional capless furnace annealing of the same implants. The yield and uniformity of DC characteristics of selectively implanted depletion mode MESFET's fabricated on 2-inch wafers annealed by the above three methods have also been compared. Capped incoherent light annealing was found to give results comparable to and in some cases better than conventional furnace annealing both in terms of activation of the implants and also device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 503
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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