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Inception of plasticity in the presence of vacancies in FCC single crystals: indenter size effect

Published online by Cambridge University Press:  24 March 2011

I. Salehinia
Affiliation:
School of Mechanical and Materials Engineering, Washington State University, Pullman, WA, 99164, USA
V. Perez
Affiliation:
School of Mechanical and Materials Engineering, Washington State University, Pullman, WA, 99164, USA
M. Weber
Affiliation:
Center for Materials Research, Washington State University, Pullman, WA, 99164, USA
D.F. Bahr
Affiliation:
School of Mechanical and Materials Engineering, Washington State University, Pullman, WA, 99164, USA
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Abstract

Atomistic simulations of nanoindentation tests were used to study the indenter radius size effect in the presence of vacancies in a (111) single crystal of nickel. For radii from 2 nm to 8 nm, the maximum shear stresses under the indenter at the onset of plastic deformation in crystals with vacancies were compared to those which cause yield in perfect crystals by placing a single vacancy in a position near the maximum shear stress underneath the indenter tip. The effect of the presence of vacancies is lowered by decreasing the indenter radius. Results obtained for several random distributions of vacancies, in the range 3.3e-4 to 0.0033, show that placing a single vacancy near a specific location produces similar results as using larger numbers of vacancies while simplifying the complexity of the simulation. Finally, visualizations of atomic configurations of a single crystal with vacancy concentration of 3.3e-4 for radii of 4 nm and 6nm show that the heterogeneous nucleation is a size dependent phenomenon.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1- Bahr, D.F., Kramer, D.E., Gerberich, W.W, Acta. Mater. 46, 3605 (1998).Google Scholar
2- Kelchner, C.L., Plimpton, S.J., Hamilton, J.C., Phys. Rev. B 58, 11085 (1998).Google Scholar
3- Schuh, C.A., Mason, J.K., Lund, A.C., Nature Mater. 4, 617 (2005).Google Scholar
4- Agullo-Lopez, F., Catlow, C.R.A., Townsend, P.D., Point Defects in Materials, 1st ed. (Academic Press, London, 1988) p. 25.Google Scholar
5- Damask, A.C., Dienes, G.J., Point Defects in Metals, 1st ed. (Gordon and Breach, Science Publishers, Inc., London, 1963) p. 45.Google Scholar
6- Chang, W.J.,. Microelectron. Eng. 65, 239 (2003).Google Scholar
7- Yuasa, M., Matsumoto, H., Hakamada, M., Mabuchi, M., Mat. Trans. 49, 2315 (2008).Google Scholar
8- Njeim, E.K., Bahr, D.F., Scr. Mater. 62, 598 (2010).Google Scholar
9- Salehinia, I., Medyanik, S.N., Metall. Mater. Trans. A, accepted for publicationGoogle Scholar
10- Salehinia, I., Perez, V., Bahr, D.F., Phil. Mag. A, submitted.Google Scholar
11- Basu, S., Moseson, A., Barsoum, M.W., J. Mater. Res. 21, 2628 (2006).Google Scholar
12- Michalske, T.A., Houston, J.E., Acta. Mater. 46, 391 (1998).Google Scholar
13- Bei, H., Shim, S., Pharr, G.M., George, E.P., Acta. Mater. 56, 4762 (2008).Google Scholar
14- Voter, A.F., Chen, S.P., Mater. Res. Soc. Symp. Proc. 186, 175 (1987).Google Scholar