Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T02:32:58.656Z Has data issue: false hasContentIssue false
  • English
  • Français

InAsSb/InAlAsSb Quantum-Well Diode Lasers Emitting Between 3 and 4 μm

Published online by Cambridge University Press:  10 February 2011

G. W. Turner ,
H. K. Choi ,
M. J. Manfra  and
M. K. Connors
G. W. Turner
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108
H. K. Choi
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108
M. J. Manfra
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108
M. K. Connors
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108
Get access

Abstract

Recently, mid-infrared diode lasers fabricated from the antimonide-based III-V compounds have been receiving increased attention for potential applications in trace gas detection, spectroscopy, pollution monitoring, and military systems. In this paper we will report the growth, fabrication, and modeling of high performance diode lasers with wavelengths longer than 3 μm. Molecular beam epitaxy (MBE) has been employed for the growth of these Type-I, strained quantum-well (QW) laser structures on GaSb and InAs substrates. The lasers consist of compressively strained InAsSb wells, tensile-strained InAlAsSb barriers, and lattice-matched AlAsSb cladding layers. QW lasers grown on GaSb substrates, with emission wavelengths of ∼3.9 μm, have operated pulsed up to 165 K. At 80 K, cw power of 30 mW/Facet has been obtained. Ridge-waveguide lasers have operated cw up to 128K. QW lasers grown on InAs substrates have emission wavelengths between 3.2 and 3.55 μm. Broad-stripe lasers on InAs have exhibited cw power of 215 mW/facet at 80 K, pulsed threshold current density as low as 30 A/cm2 at 80 K, characteristic temperatures (TO) between 30 and 40 K, and maximum pulsed operating temperature of 225 K. Ridge-waveguide lasers on InAs have cw threshold current of 12 mA at 100 K, and a maximum cw operating temperature of 175 K. In this paper we will present some of the key issues regarding the MBE growth, fabrication, and modeling of such lasers and discuss future directions for improved device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 3
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Turner, G.W., Choi, H.K., and Le, H.Q., J. Vac. Sci. Technol. B 13, p. 699 (1995).Google Scholar
2. Hasenberg, T.C., Chow, D.H., Kost, A.R., Miles, R.H., and West, L., Electron. Lett. 31, p. 275 (1995).Google Scholar
3. Faist, J., Capasso, F., Sivco, D.L., Sirtori, C., Hutchinson, A.L., and Cho, A.Y., Science 264, p. 553 (1994).Google Scholar
4. Although lead salt (IV-VI) semiconductor diode lasers have demonstrated 203 K cw operation [Feit, Z., Kostyk, D., Woods, R.J., and Mak, P., Appl. Phys. Lett. 58, p. 343 (1991)] they are limited to very low power operation.Google Scholar
5. Turner, G.W., Choi, H.K., Calawa, D.R., Pantano, J.V., and Chludzinski, J.W., J. Vac. Sci. Technol. B 12, p. 1266(1994).Google Scholar
6. Onabe, K., NEC Res. Dev. 72, p. 1 (1984).Google Scholar
7. Choi, H.K. and Turner, G.W., to be published in Phys. Scripta.Google Scholar
8. Casey, H.C. and Panish, M.B., Heterostructure Lasers, Part B, Academic, New York, 1978, p. 25.Google Scholar
9. Tuttle, G., Kroemer, H., and English, J.H., J. Appl. Phys. 67, p. 3032 (1990).Google Scholar
10. Choi, H.K., Turner, G.W., Manfra, M.J., Connors, M.K., Herrmann, F.P., Baliga, A., and Anderson, N.G. SPIEGoogle Scholar
11. Ghiti, A. and O'Reiley, E.P., Semicond. Sci. Technol. 8, p. 1655 (1993).Google Scholar
12. Baliga, A., Agahi, F., Anderson, N. G., Lau, K. M., and Cadambi, S., IEEE J. Quantum Electron. 32, 29 (1996).Google Scholar
13. Wang, J., Von Allmen, P., Leburton, J.-P., and Linden, K. J., IEEE J. Quantum Electron. 31, 864 (1995).Google Scholar