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In Situ Study of Isothermal Strain Relaxation in Si-Ge Heteroepitaxial Films Using Substrate Curvature Measurements

Published online by Cambridge University Press:  22 February 2011

Véronique T. Gillard ,
David B. Noble  and
William D. Nix
Véronique T. Gillard
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
David B. Noble
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
William D. Nix
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
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Abstract

Understanding die kinetics and mechanisms of strain relaxation in Si-Ge heteroepitaxial films is pertinent to several device applications. In this paper we present a method for determining the evolution of the mobile dislocation density with time during the course of strain relaxation taking place in an isothermal annealing experiment.

Wafer curvature measurements using a laser scanning technique are used to determine the elastic strain after growth in films of variable thickness and to follow the strain relaxation during isothermal annealing experiments. By coupling the strain relaxation measurements with previous TEM measurements of dislocation velocities in this system, the mobile threading dislocation density and its evolution with time are determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 395
Copyright
Copyright © Materials Research Society 1992

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References

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