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In Situ Study of Barrier Layers Using Spectroscopic Ellipsometry and Mass Spectroscopy of Recoiled Ions

Published online by Cambridge University Press:  10 February 2011

Y. Gao ,
A.H. Mueller ,
E.A. Irene ,
O. Auciello ,
A.R. Krauss  and
J.A. Schultz
Y. Gao
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC 27599
A.H. Mueller
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC 27599
E.A. Irene
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC 27599
O. Auciello
Affiliation:
Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, IL 60439
A.R. Krauss
Affiliation:
Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, IL 60439
J.A. Schultz
Affiliation:
Ionwerks, Houston, TX 77005
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Abstract

An in situ study of barrier layers using spectroscopic ellipsometry (SE) and Time-of-Flight (ToF) mass spectroscopy of recoiled ions (MSRI) is presented. First the formation of copper silicides has been observed by real-time SE and in situ MSRI in annealed Cu/Si samples. Second TaSiN films as barrier layers for copper interconnects were investigated. Failure of the TaSiN layers in Cu/TaSiN/Si samples was detected by real-time SE during annealing and confirmed by in situ MSRI. The effect of nitrogen concentration on TaSiN film performance as a barrier was also examined. The stability of both TiN and TaSiN films as barriers for electrodes for dynamic random access memory (DRAM) devices has been studied. It is shown that a combination of in situ SE and MSRI can be used to monitor the evolution of barrier layers and detect the failure of barriers in real-time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 619: Symposium L – Recent Developments in Oxide & Metal Epitaxy – Theory… , 2000 , 135
Copyright
Copyright © Materials Research Society 2000

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References

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