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In Situ Spectroscopic Ellipsometry for Real Time Composition Control of Hg1−xCdxTe Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

R. Dat ,
F. Aqariden ,
W. M. Duncan ,
D. Chandra  and
H. D. Shih
R. Dat
Affiliation:
Raytheon TI Systems, Sensors and Infrared Laboratory, P.O Box. 655936, MS 150, Dallas, TX 75265, U.S.A
F. Aqariden
Affiliation:
Raytheon TI Systems, Sensors and Infrared Laboratory, P.O Box. 655936, MS 150, Dallas, TX 75265, U.S.A Permanent address: Microphysics Laboratory, Department of Physics, M/C 273, University of Illinois at Chicago, 845 W Taylor #2236SES, Chicago, IL 60607, U. S. A.
W. M. Duncan
Affiliation:
Texas Instruments Incorporated, Components and Materials Research Center, P. O. Box 655936, MS 147, Dallas, TX 75265, U.S.A
D. Chandra
Affiliation:
Raytheon TI Systems, Sensors and Infrared Laboratory, P.O Box. 655936, MS 150, Dallas, TX 75265, U.S.A
H. D. Shih
Affiliation:
Raytheon TI Systems, Sensors and Infrared Laboratory, P.O Box. 655936, MS 150, Dallas, TX 75265, U.S.A
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Abstract

Spectral ellipsometry (SE) was applied to in situ composition control of Hg1−xCdxTe grown by molecular beam epitaxy (MBE), and the impact of surface topography of the Hg1−xCdxTe layers on the accuracy of SE was investigated. Of particular importance is the presence of surface defects, such as voids in MBE- Hg1−xCdxTe layers. While dislocations do not have any significant impact on the dielectric functions, the experimental data in this work show that MBE- Hg1−xCdxTe samples having the same composition, but different void densities, have different effective dielectric functions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 377
Copyright
Copyright © Materials Research Society 1998

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