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In Situ Reflection High-Energy Electron Diffraction Study of Structure and Morphology Evolution of AlN Thin Films During Growth

Published online by Cambridge University Press:  10 February 2011

F. Jin ,
G. W. Auner ,
R. Naik ,
P. Zatyko  and
U. Rao
F. Jin
Affiliation:
Electrical Engineering Dept., and * Physics Dept., Wayne State Univ., Detroit, MI 48202
G. W. Auner
Affiliation:
Electrical Engineering Dept., and * Physics Dept., Wayne State Univ., Detroit, MI 48202
R. Naik
Affiliation:
Electrical Engineering Dept., and * Physics Dept., Wayne State Univ., Detroit, MI 48202
P. Zatyko
Affiliation:
Electrical Engineering Dept., and * Physics Dept., Wayne State Univ., Detroit, MI 48202
U. Rao
Affiliation:
Electrical Engineering Dept., and * Physics Dept., Wayne State Univ., Detroit, MI 48202
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Abstract

AIN films were grown on Si (111) substrates using a PSMBE deposition system. Two types of growth methods were used: (i) a continuous growth at one temperature and (ii) a two stage growth where a buffer layer at low temperature is followed by deposition at higher temperature. The structure and morphology of the films grown at different temperatures are compared. The evolution of surface structure and morphology of the film during the growth were studied using in-situ RHEED, X-ray diffraction, and AFM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 191
Copyright
Copyright © Materials Research Society 1997

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References

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