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In Situ, Real-Time Studies of Film Growth Processes Using Ion Scattering and Direct Recoil Spectroscopy Techniques

Published online by Cambridge University Press:  10 February 2011

V.S. Smentkowskiv ,
A. R. Krauss ,
O. Auciello ,
J. Im ,
D.M. Gruen ,
J. Holecek ,
K. Waters  and
J. A. Schultz
V.S. Smentkowskiv
Affiliation:
GE Corporate Research and Development Center, Schenectady, NY 12301. Tel: 518-387-5467, Fax: 518-387-6972, e-mail: [email protected]
A. R. Krauss
Affiliation:
Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, IL 60439
O. Auciello
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
J. Im
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
D.M. Gruen
Affiliation:
Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, IL 60439
J. Holecek
Affiliation:
Ionwerks, Houston, TX 77005
K. Waters
Affiliation:
Ionwerks, Houston, TX 77005
J. A. Schultz
Affiliation:
Ionwerks, Houston, TX 77005
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Abstract

Time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) enables the characterization of the composition and structure of surfaces with 1–2 monolayer specificity. It will be shown that surface analysis is possible at ambient pressures greater than 3 mTorr using TOF-ISARS techniques; allowing for real-time, in situ studies of film growth processes. TOF-ISARS comprises three analytical techniques: ion scattering spectroscopy (ISS), which detects the backscattered primary ion beam; direct recoil spectroscopy (DRS), which detects the surface species recoiled into the forward scattering direction; and mass spectroscopy of recoiled ions (MSRI), which is a variant of DRS capable of isotopic resolution for all surface species - including H and He. The advantages and limitations of each of these techniques will be discussed.

The use of the three TOF-ISARS methods for real-time, in situ film growth studies at high ambient pressures will be illustrated. It will be shown that MSRI analysis is possible during sputter deposition. It will be also be demonstrated that the analyzer used for MSRI can also be used for time of flight secondary ion mass spectroscopy (TOF-SIMS) under high vacuum conditions. The use of a single analyzer to perform the complimentary surface analytical techniques of MSRI and SIMS is unique. The dual functionality of the MSRI analyzer provides surface information not obtained when either MSRI or SIMS is used independently.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 569: Symposium U – In Situ Process Diagnostics and Modelling , 1999 , 3
Copyright
Copyright © Materials Research Society 1999

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References

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