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In situ Pyrometric Interferometry For Molecular Beam Epitaxy of AlxGa1−xN on Si (111)

Published online by Cambridge University Press:  17 March 2011

S. A. Nikishin ,
S. Francoeur  and
H. Temkin
S. A. Nikishin
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409
S. Francoeur
Affiliation:
Now with the National Renewable Energy Laboratory, Golden, CO 80401-3393
H. Temkin
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409
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Abstract

We apply pyrometric interferometery to control the growth of GaN, AlN, and AlxGa1−xN on Si (111) by molecular beam epitaxy. We show that the period of intensity oscillations in the temperature measured by the pyrometer is caused by optical interference in the growing nitride layer. The period of oscillations is inversely proportional to the growth rate. This effect is used for in-situ measurement of the growth rate of GaN, AlN, and AlxGa1−xN (for 0<×<1). We also show that pyrometric interferometery can be used for in-situ determination of the composition of the growing layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.57
Copyright
Copyright © Materials Research Society 2001

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References

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