Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-02-05T05:52:39.171Z Has data issue: false hasContentIssue false
  • English
  • Français

In Situ Observation of Oxidization Process at the Most Upper Surfaces by x-ray Surface Propagation Waves

Published online by Cambridge University Press:  10 February 2011

Toshihisa Horiuchi ,
Kenji Ishida  and
Kazumi Matsushige
Toshihisa Horiuchi
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida-honmashi, Sakyo-ku, Kyoto 606-8501, Japan
Kenji Ishida
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida-honmashi, Sakyo-ku, Kyoto 606-8501, Japan
Kazumi Matsushige
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida-honmashi, Sakyo-ku, Kyoto 606-8501, Japan
Get access

Abstract

The characteristics and applicable studies of the x rays scattered and propagating near the most upper surface of the substrate under the total reflection condition are described. Since the peak energy of the x rays gives direct information on the electron density of the surface materials, some experiments have been first conducted to confirm this. Then, an in-situ observation of oxidization processes for evaporated Cu films has been also conducted under a UV irradiation and an acid vapor exposure, revealing that there exist several oxidizing stages in time variations, namely a slight increase in the electron density at the initial stage, subsequently an abrupt decrease, and then steady value suggesting the sealing-off mechanism in the oxidization phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 591 , 1999 , 15
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Horiuchi, T., Moriyama, Y., Ishida, K., Matsushige, K., Tech. Report of IEICE, OME 98–26, (1998-2006) p. 13 in JapaneseGoogle Scholar
2.Sanl, M. K., Phys. Rev. Lett. 66, (1991) p. 628Google Scholar
3.Yoneda, Y., Phys. Rev. 131, (1963) p.2010Google Scholar
4.Parratt, L. G., Phys. Rev. 95, (1954) p.359Google Scholar
5.Boer, D. K. G. de, Phys. Rev. B44, (1991) p.489Google Scholar
6.Holy, V., Kudbena, J., and Ohlidal, I., Lischka, K., and Plotz, W., Phys. Rev. B47, (1993) p. 15Google Scholar