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In Situ Observation of Instability in Step Morphology during Epitaxy and Erosion

Published online by Cambridge University Press:  17 March 2011

P. Finnie  and
Y. Homma
P. Finnie
Affiliation:
New affiliation: Institute for Microstructural Sciences, National Research Council Canada Montreal Road, Ottawa, ON, Canada K1A OR6
Y. Homma
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-Shi, Kanagawa 243-0198, Japan
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Abstract

Instability in the morphology of atomic steps is predicted for certain growth conditions [1]. To test and extend this prediction, various atomic step geometries were prepared on ultra-flat Si(111) substrates. Atomic steps were observed using an in situ scanning electron microscope. For specific growth conditions and certain step arrangements, unstable growth was observed. The stability of step flow growth depends, in part, on the flux arriving at the surface. In contrast to the theoretical prediction, in this more general situation, the same type of instability can also be observed in sublimation. For both growth and sublimation, the terrace widths adjacent to a step determine whether that step will undergo stable or unstable step flow. The mechanism by which the step spacing controls the morphology is described. Although only the Si(111) surface was observed, it is predicted that the same step instability should be present on many surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P10.12
Copyright
Copyright © Materials Research Society 2001

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References

1. Bales, G.S. and Zangwill, A., Phys. Rev. B 41, 5500 (1990).Google Scholar
2. Pimpenelli, A. and Villain, J. Physics of Crystal Growth (Cambridge University Press, Cambridge 1998).Google Scholar
3. Saito, Y. Statistical Physics of Crystal Growth (World Scientific, Singapore 1996).Google Scholar
4. Markov, I. Crystal Growth for Beginners: Fundamentals of Nucleation, Crystal Growth and Epitaxy (World Scientific, Singapore 1995).Google Scholar
5. Pimpinelli, A. and Metois, J. J., Phys. Rev. Lett. 72, 3566 (1994).Google Scholar
6. Finnie, P. and Homma, Y., Phys. Rev. Lett. 85, 3237 (2000).Google Scholar
7. Homma, Y. and Finnie, P., “Instability in atomic step morphology during the sublimation of Si(111)” American Vacuum Society 47th International Symposium (Abstract), Boston (2000).Google Scholar
8. Homma, Y., Finnie, P. and Uwaha, M., to be published.Google Scholar
9. Homma, Y., Suzuki, M. and Tomita, M., Appl. Phys. Lett. 62, 3276 (1993).Google Scholar
10. Homma, Y., Ogino, T., and Aizawa, N., Jpn. J. Appl. Phys. 35, 241 (1996).Google Scholar
11. Homma, Y., Hibino, H., Ogino, T., and Aizawa, N., Phys. Rev. B 55, R10 237 (1997).Google Scholar
12. Tanaka, S., Umbach, C. C., Blakely, J. M., Tromp, R. M. and Mankos, M., Appl. Phys. Lett. 69, 1235 (1996).Google Scholar
13. Finnie, P. and Homma, Y., Phys. Rev. Lett. 82, 2737 (1999).Google Scholar
14. Finnie, P. and Homma, Y., Phys. Rev. B 62, 8313 (2000).Google Scholar
15. Jeong, H. C. and Williams, E. D., Surf. Sci. Reports 34, 171 (1999).Google Scholar
16. Nozières, P. in Solids Far From Equilibrium, Godrèche, C., ed., (Cambridge University Press, Cambridge, 1991).Google Scholar
17. Ehrlich, G. and Hudda, F. G., J. Chem. Phys. 44, 1039 (1966).Google Scholar
18. Schwoebel, R. L. and Shipsey, E. J., J. Appl. Phys. 37, 3682 (1966).Google Scholar
19. Finnie, P. and Homma, Y., J. Vac. Sci. Technol. A 18, 1941 (2000).Google Scholar