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In Situ Multi-Wavelength Ellipsometric Control of Thickness and Composition For Bragg Reflector Structures

Published online by Cambridge University Press:  15 February 2011

Craig Herzinger ,
Blaine Johs ,
Peter Chow ,
Dave Reich ,
Greg Carpenter ,
Dan Croswell  and
Jim Van Hove
Craig Herzinger
Affiliation:
J.A. Woollam Co., 650 ‘J’ St. #39, Lincoln, NE 68508
Blaine Johs
Affiliation:
J.A. Woollam Co., 650 ‘J’ St. #39, Lincoln, NE 68508
Peter Chow
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344
Dave Reich
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344
Greg Carpenter
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344
Dan Croswell
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344
Jim Van Hove
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344
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Abstract

We have demonstrated real-time feedback control of thickness and composition for Bragg reflector structures using in situ multi-wavelength ellipsometry. This demonstration was performed under conditions which were not ideal for ellipsometric measurements: the angle of incidence for the ellipsometric measurement beam was far away from the Brewster angle, substrate rotation was enabled (which caused an angular wobble in the measurement beam), and strain effects were present in the ellipsometer windows. Furthermore, to simulate drift in the MBE system (and test the effectiveness of the ellipsometer control), the Ga effusion cell was ramped to change the Ga flux by 50% during two of the growth runs. Results of the growth control precision and accuracy are presented; the influence of the non-ideal measurement conditions on the ellipsometer growth control capability is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 347
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Snyder, P.G., Rost, M.C., Bu-Abbud, G.H., Woollam, J.A., and Alterovitz, S.A., J. Appl. Phys. 60, p. 3293 (1986).Google Scholar
2. Studna, A.A., Aspnes, D.E., Florez, L.T., Wilkens, B.J., Harbison, J.P., and Ryan, R.E., J. Vac. Sci. Technol. A 7, p. 3291 (1989).Google Scholar
3. Nijs, J.M.M. de and Silfhout, A. van, J. Opt. Soc. Am. A 5, p. 773 (1988).Google Scholar
4. M-44 in situ ellipsometery system, J.A. Woollam Co, Lincoln, NE USA.Google Scholar
5. Johs, Blaine, Doerr, Dave, Pittal, Shakil, Bhat, I.B., and Dakshinamurthy, S., Thin Solid Films 233, p. 293 (1993).Google Scholar
6. Collins, R.W., Rev. Sci. Instrum. 61, p. 2029 (1990).Google Scholar
7. Aspnes, D.E., J. Opt. Soc. Am. A 10, p. 974 (1993).Google Scholar
8. Press, W.H., Flannery, B.P., Teukolsky, S.A., and Vetterling, W.T., Numerical recipes in C, Cambridge University Press (1988).Google Scholar
9. Jellison, G. E. Jr., Thin Solid Films 234, p. 416 (1993).Google Scholar
10. Azzam, R.M.A. and Bashara, N.M., Ellipsometry and Polarized Light, North-Holland, Amsterdam (1977).Google Scholar