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In Situ Morphological Study of The Al/SiO2 Reaction Around The eutectic Point

Published online by Cambridge University Press:  15 February 2011

Lévy Allam  and
Vincent Fleury
Lévy Allam
Affiliation:
Laboratoire de Physique Electronique, IUT de Chartres, Université d'Orléans, 1 Place Mendès-France, 28000 Chartres, France
Vincent Fleury
Affiliation:
Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique-CNRS, 91128 Palaiseau, France
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Abstract

In the context of the electronic industry, thin films of aluminum are deposited on silica. However, the Al/SiO2 interface is unstable. A reaction leading to oxidation of Al and reduction of SiO2 occurs. We present an in situ study of this reaction, in thin films, at temperatures above 500°C. This experiment allows to understand the essential steps of the oxidation of Al by SiO2, and it shows that thermal cycles can be used to generate nucleation centers artificially. More generally, the morphological interpretation of out-of-equilibrium growth patterns gives important insight into the coupling between the thermodynamics and morphological aspects of a thin film chemical reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 580: Symposium E – Nucleation & Growth Processes in Materials , 1999 , 165
Copyright
Copyright © Materials Research Society 2000

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