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In Situ Monitoring of Anodic Oxide Growth on SI (001) by Interface Second-Harmonic Generation

Published online by Cambridge University Press:  10 February 2011

S. Janz  and
J. A. Bardwell
S. Janz
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Montreal Rd., Ottawa, Ontario, Canada, KIA 0R6.
J. A. Bardwell
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Montreal Rd., Ottawa, Ontario, Canada, KIA 0R6.
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Abstract

Optical second-harmonic (SH) generation is used to monitor the anodic growth of oxide on a (001) Si surface. The measured SH intensity is dominated by the nonlinear optical response of the space charge region in the Si just below the Si/oxide interface. The interface SH technique can detect the onset of H desorption, identify the flat band potential, and probe the evolution of space charge within the growing oxide layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 502: Symposium II – In Situ Process Diagnostics & Intelligent Materials Processing , 1997 , 59
Copyright
Copyright © Materials Research Society 1998

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References

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