Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-25T18:40:27.905Z Has data issue: false hasContentIssue false
  • English
  • Français

In Situ Laser Recrystallization of CVD Silicon Films*

Published online by Cambridge University Press:  15 February 2011

G. A. van der Leeden ,
R. T. Young ,
B. R. Appleton  and
J. Narayan
G. A. van der Leeden
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
R. T. Young
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
Get access

Abstract

Polycrystalline silicon films were deposited on singlecrystal silicon substrates from a SiH4 –H2 mixture at 660°C and epitaxially recrystallized with ruby laser pulses during the deposition. The surface morphology was found to depend critically on the surface conditions of the substrate. Using appropriate cleaning procedures, 0.5 and 1.0 micron thick layers were deposited and laser recrystallized during the deposition. Ion scattering/channeling analysis showed that the layers were single crystalline with a high degree of perfection. Using TEM, dislocation densities of 103–104 cm−2 were found, but some areas were dislocation free.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 221
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Research sponsored by the Solar Energy Research Institute under contract DS–ø–9078–1 and by the Division of Materials Sciences, U.S. Department of Energy under contract W–7405–eng–26 for Union Carbide Corporation.

References

REFERENCES

1. Young, R. T., unpublished results.Google Scholar
2. Young, R. T., Wood, R. F. and Christie, W. H., J. Appl. Phys., in press.Google Scholar
3. Eversteyn, F. C. and Put, B. H., J. Electrochem. Soc. 120, 106 (1973).CrossRefGoogle Scholar
4. Kern, Werner, Solid State Technol. 15 (1), 34 (1972).Google Scholar
5. Kern, Werner, Solid State Technol. 15 (2), 39 (1972).Google Scholar
6. Bloem, J. and Giling, L. J. in: Current Topics in Materials Science, Vol. 1, Kaldis, E., ed. (North-Holland, Amsterdam 1978) pp. 147–342 and references therein.Google Scholar
7. Zehner, D. M., White, C. W. and Ownby, G. W., Surf. Sci. Letts. 92, L67 (1980).Google Scholar
8. deJong, T., Smit, L., Korablev, V. V. and Saris, F. W., These proceedings.Google Scholar