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In Situ Investigation of the a-Si:H/C-Si Interface

Published online by Cambridge University Press:  10 February 2011

H. Feist ,
C. Swiatkowski ,
J. R. Elmiger ,
M. Zipfel  and
M. Kunst
H. Feist
Affiliation:
Hahn-Meitner-Institut, Department Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
C. Swiatkowski
Affiliation:
Hahn-Meitner-Institut, Department Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
J. R. Elmiger
Affiliation:
Hahn-Meitner-Institut, Department Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
M. Zipfel
Affiliation:
Hahn-Meitner-Institut, Department Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
M. Kunst
Affiliation:
Hahn-Meitner-Institut, Department Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
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Abstract

The deposition of a-Si:H films on crystalline silicon substrates was monitored in situ by transient photoconductivity measurements in the microwave frequency range. At the start of the deposition a drastic increase of the interface recombination velocity was observed, followed by a rapid decrease. The implications of these results for the structure of the interface are discussed. Changes of the interface after deposition were detected without a change of the temperature, even at 250'C: The long relaxation time of the structure of the interface will be discussed. Ex situ results on the samples produced will be compared to the in situ results in view of the passivation properties of a-Si:H films on c-Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 449
Copyright
Copyright © Materials Research Society 1996

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References

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