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In Situ Infrared Observation of Hydrogenation, Oxidation, And Adsorption On Silicon Surfaces in Solutions

Published online by Cambridge University Press:  03 September 2012

Yoshihiro Sugita  and
Satoru Watanabe
Yoshihiro Sugita
Affiliation:
Fujitsu Laboratories ltd., 10-1 Morinosato-Wakamiya Atsugi, 243-01 Japan, CA 94304
Satoru Watanabe
Affiliation:
Fujitsu Laboratories ltd., 10-1 Morinosato-Wakamiya Atsugi, 243-01 Japan, CA 94304
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Abstract

Fourier transform infrared attenuated total reflection method was employed to observe Si surfaces during wet chemical treatments. We observed the time evolution of the surface chemical structure during the oxidizing of hydrogenated Si surfaces in such oxidants as ozonized water and hydrogen peroxide using (100) and (111) surfaces. We also examined the adsorption of surfactants which were introduced in an HF solution. The interaction of adsorbates at the interface and with molecules in a liquid phase was discussed based on our in situ observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 63
Copyright
Copyright © Materials Research Society 1997

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