Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T02:18:05.741Z Has data issue: false hasContentIssue false
  • English
  • Français

In situ HREM Study on the Thermal Stability of Atomic Layer Epitaxy Grown InAs/GaAs Quantum Dots

Published online by Cambridge University Press:  01 February 2011

H. S. Kim ,
J. H. Suh ,
C. G. Park ,
S. J. Lee ,
S. K. Noh ,
J. D. Song ,
Y. J. Park ,
W. J. Choi  and
J. I. Lee
H. S. Kim
Affiliation:
Department of Materials Science & Engineering Pohang University of Science and Technology (POSTECH), Pohang, Korea
J. H. Suh
Affiliation:
Department of Materials Science & Engineering Pohang University of Science and Technology (POSTECH), Pohang, Korea
C. G. Park
Affiliation:
Department of Materials Science & Engineering Pohang University of Science and Technology (POSTECH), Pohang, Korea
S. J. Lee
Affiliation:
Quantum Dot Technology Laboratory, Korea Research Institute of Standards and Science, (KRISS), Daejeon, Korea
S. K. Noh
Affiliation:
Quantum Dot Technology Laboratory, Korea Research Institute of Standards and Science, (KRISS), Daejeon, Korea
J. D. Song
Affiliation:
Nano Device Research Center, Korea Institute of Science & Technology (KIST), Seoul, Korea
Y. J. Park
Affiliation:
Nano Device Research Center, Korea Institute of Science & Technology (KIST), Seoul, Korea
W. J. Choi
Affiliation:
Nano Device Research Center, Korea Institute of Science & Technology (KIST), Seoul, Korea
J. I. Lee
Affiliation:
Nano Device Research Center, Korea Institute of Science & Technology (KIST), Seoul, Korea
Get access

Abstract

Self-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy technique and the structure and the thermal stability of QDs have been studied by using high resolution electron microscopy with in-situ heating experiment capability. The QDs were found to form a hemispherical structure with {136} side facet in the early stage of growth. The average height and diameter of the QD were found to be ∼ 5.5 nm and ∼ 23 nm, respectively. Upon capping by GaAs layer, however, the apex structure of QD changed to a flat one. In-situ heating experiment within TEM revealed that the uncapped QD remained stable until 580°C. However, at temperature above 600°C, the QD structure became flat due to the fast decrease of QD height. After flattening, the atoms diffused from the InAs QD to the GaAs substrate, resulting in the total collapse. The density of the QD decreased abruptly by this collapse and most QDs disappeared at above 600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 839: Symposium P – Electron Microscopy of Molecular and Atom-Scale Mechanical Behavior, Chemistry, and Structure , 2004 , p7.10
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chin, A., Liao, C. C., Chu, J. and Li, S. S., J. of Crystal Growth 175/176, 999 (1997)Google Scholar
2. Kato, T., Takeuchi, T., Inoue, Y., Hasegawa, S., Inoue, K. and Nakashima, H., Appl. Phys. Lett. 72(4), 465 (1998)Google Scholar
3. Priester, C. and Lanno, M., Phys. Rev. Lett. 75(1), 93 (1995)Google Scholar
4. Leonard, D., Krishnamurthy, M., Reaves, C. M., Denbaars, S. P., and Petroff, P. M., Appl. Phys. Lett. 63, 3203, (1993)Google Scholar
5. Garcia, J. M., Medeiros-Rebeiro, G., Schmidt, K., Ngo, T., Feng, J. F., Lorke, A., Kotthaus, J., and Petroff, P. M., Appl. Phys. Lett. 71, 2014, (1997)Google Scholar
6. Kaiander, I. N., Sellin, R. L., Kettler, T., Ledentsov, N. N., Bimberg, D., Zakharov, N. D., and Werner, P., Appl. Phys. Lett. 84, 2992 (2004)Google Scholar
7. Yano, K., Ishii, T., Hashimoto, T., Kobayashi, T., Murai, F., and Seki, K., IEEE Trans. Electron Devices 41, 1628 (1994)Google Scholar
8. Phillips, J., Kamath, K., and Bhattacharya, P., Appl. Phys. Lett. 72, 2020 (1998)Google Scholar
9. Grundmann, M., Stier, O. and Bimberg, D., Phys. Rev. B 52, 11969 (1995)Google Scholar
10. Ledentsov, N.N., Shchukin, V.A., Grundmann, M., Kirstaedter, N., Böhrer, J., Schmidt, O., Bimberg, D., Ustinov, V.M., Egorov, A.Y., Zhukov, A.E., Kop'ev, P.S., Zaitsev, S.V., Gordeev, N.Y., Alferov, Z.I., Borovkov, A.I., Kosogov, A.O., Ruvimov, S.S., Werner, P., Gösele, U., Heydenreich, J., Phys. Rev. B. 54, 8743 (1996)Google Scholar