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In Situ Ellipsometry of Ge Clusters and Ultrathin Films
Published online by Cambridge University Press: 28 February 2011
Abstract
The evolution of the nanostructure of a-Ge sputter-deposited onto naturally oxidized c-Si and disordered carbon substrates is characterized by in situ ellipsometry, with the focus of attention being on the initial stage when clusters are in evidence. The structural data deduced from ellipsometry are reproducible, are a sensitive function of the preparation parameters, and are also consistent with data deduced from less sensitive Auger electron spectroscopy. The information provided by ellipsometry is of critical importance in studying the effects of average size on the electronic and vibrational properties of clusters by ultraviolet photoelectron spectroscopy and Raman spectroscopy. Other structural probes of clusters for this system, including transmission electron microscopy, have failed to yield reliable results due to the small cluster size.
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- Copyright © Materials Research Society 1991
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