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In Situ Ellipsometry of Ge Clusters and Ultrathin Films

Published online by Cambridge University Press:  28 February 2011

B.-Y. Yang
Affiliation:
Department of Physics and Materials Research Laboratory, Penn State University, University Park, PA 16802.
T. Gu
Affiliation:
Department of Physics and Materials Research Laboratory, Penn State University, University Park, PA 16802.
R.Q. Yu
Affiliation:
Department of Physics and Materials Research Laboratory, Penn State University, University Park, PA 16802.
J.S. Lannin
Affiliation:
Department of Physics and Materials Research Laboratory, Penn State University, University Park, PA 16802.
R.W. Collins
Affiliation:
Department of Physics and Materials Research Laboratory, Penn State University, University Park, PA 16802.
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Abstract

The evolution of the nanostructure of a-Ge sputter-deposited onto naturally oxidized c-Si and disordered carbon substrates is characterized by in situ ellipsometry, with the focus of attention being on the initial stage when clusters are in evidence. The structural data deduced from ellipsometry are reproducible, are a sensitive function of the preparation parameters, and are also consistent with data deduced from less sensitive Auger electron spectroscopy. The information provided by ellipsometry is of critical importance in studying the effects of average size on the electronic and vibrational properties of clusters by ultraviolet photoelectron spectroscopy and Raman spectroscopy. Other structural probes of clusters for this system, including transmission electron microscopy, have failed to yield reliable results due to the small cluster size.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Theeten, J.B. and Aspnes, D.E., Ann. Rev. Mater. Sci. 11, 97 (1981).Google Scholar
[2] Yu, R.Q., Former, J., and Lannin, J.S., J. Vac. Sci. Technol. A 8 3488 (1990).Google Scholar
[3] Former, J., Yu, R.Q., and Lannin, J.S., J. Vac. Sci. Technol. A 8 3493 (1990).Google Scholar
[4] Studna, A. A., Aspnes, D.E., Florez, L.T., Wilkens, B.J., Harbison, J.P., and Ryan, R.E., J. Vac. Sci. Technol. A 7, 3291 (1989).Google Scholar
[5] For a review see Collins, R.W. in: Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific, Singapore, 1988), p. 1003.Google Scholar
[6] An, I., Nguyen, H., Nguyen, N., and Collins, R.W., Phys. Rev. Lett. 65, 2274 (1990).Google Scholar
[7] Collins, R.W. and Yang, B.-Y., J. Vac. Sci. Technol. B 7, 1155 (1989).Google Scholar