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In Situ Ellipsometric Monitoring of Low Temperature Growth of Poly-Si Films By RF Plasma CVD

Published online by Cambridge University Press:  16 February 2011

T. Shirafuji ,
Y. Hayashi  and
K. Tachibana
T. Shirafuji
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto, 606, Japan
Y. Hayashi
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto, 606, Japan
K. Tachibana
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto, 606, Japan
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Abstract

In situ ellipsometry has been applied for monitoring silicon-thin-film growth on a glass substrate in RF-discharge plasma of SiF4+SiH4 diluted with H2 (80%). Polycrystalline silicon films were obtained at substrate temperature of 300°C and RF power density of 500MW/cm2. Volumetric fraction of c-Si increased from 50 to 80% by increasing the SiF4/ (SiF4+SiH4) flow ratio from 0 to 0.5. The fraction of c-Si also increased to 63% by sequential repetition of deposition with SiH4/H2 and etching with SiF4. The etching rate of a-Si was less than that of c-Si. These results suggest that semi-preferential etching of a-Si enhances the increase of c-Si fraction. A gas-phase reaction simulation has suggested that the dominant deposition precursor is SiH3, and the etchant is F in the present condition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 73
Copyright
Copyright © Materials Research Society 1994

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