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In Situ Design of Experiments for A Reactive Ion Etching Process

Published online by Cambridge University Press:  10 February 2011

Cecilia G. Galarza ,
Pete Klimecky ,
Pramod P. Khargonekar  and
Fred L. Terry Jr.
Cecilia G. Galarza
Affiliation:
Electrical Engineering and Computer Science Department University of Michigan, Ann Arbor, MI 48109-2122
Pete Klimecky
Affiliation:
Electrical Engineering and Computer Science Department University of Michigan, Ann Arbor, MI 48109-2122
Pramod P. Khargonekar
Affiliation:
Electrical Engineering and Computer Science Department University of Michigan, Ann Arbor, MI 48109-2122
Fred L. Terry Jr.
Affiliation:
Electrical Engineering and Computer Science Department University of Michigan, Ann Arbor, MI 48109-2122
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Abstract

We introduce a new procedure to perform a design of experiments (DOE) for plasma etching processes. In particular, we use in situ etch rate estimations to maximize the number of observable setpoints during a single run of the etching process. This procedure is applied to characterize the spatial uniformity of a plasma chamber used in the manufacturing of flat panel displays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 569: Symposium U – In Situ Process Diagnostics and Modelling , 1999 , 165
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Garvin, C., Grimard, D., and Grizzle, J., J. Vac. Sci. Technol. A 16,2,1998 Google Scholar
[2] Kong, W. and Terry, F. L. Jr., J. Vac. Sci. Technol. B., 1999 (submitted for publication)Google Scholar
[3] Vincent, T. L., Khargonekar, P. P., and Terry, F. L. Jr. in Diagnostic Techniques for Semiconductor Materials Processing II (Mater. Res. Soc. Symp. Proc. bf 406, Pittsburgh, PA, 1996) pp.87–93.Google Scholar
[4] Vincent, T. L., Khargonekar, P. P., and Terry, F. L. Jr., IEEE Trans. on Semi. Manuf.,10, 1, (1997).10.1109/66.554482Google Scholar
[5] Butle, S. W., Stefani, J., Sullivan, M., Maung, S., Barna, G., and Henck, S., J. Vac. Sci. Technol. AGoogle Scholar
[6] Urban, F. K. III, and Tabet, M. F., Thin Solid Films, 245, (1994), 167–173.10.1016/0040-6090(94)90894-XGoogle Scholar
[7] Baird, D. C., Experimentation : an introduction to measurement theory and experiment design, (Prentice Hall, Englewood Cliffs, N.J., 1995, 3rd. ed.).Google Scholar
[8] Anderson, B. and Moore, J., Optimal Filtering, (Prentice-Hall, Englewood Cliffs, N.J, 1979).Google Scholar
[9] Azzam, R. and Bashara, N., Ellipsometry and Polarized light, (North Holland, New York, 1989).Google Scholar