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In Situ Cross-Sectional Scanning Tunneling Microscopy Sample Preparation Technique

Published online by Cambridge University Press:  21 February 2011

Y.-C. Kim ,
M. J. Nowakowski  and
D. N. Seidman
Y.-C. Kim
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, R. R. McCormick School of Engineering and Applied Science, Northwestern University, 2225 N. Campus Drive, Evanston, IL 60208-3108
M. J. Nowakowski
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, R. R. McCormick School of Engineering and Applied Science, Northwestern University, 2225 N. Campus Drive, Evanston, IL 60208-3108
D. N. Seidman
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, R. R. McCormick School of Engineering and Applied Science, Northwestern University, 2225 N. Campus Drive, Evanston, IL 60208-3108
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Abstract

A novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy (XSTM) applications. This technique can be easily adapted to any ultrahigh vacuum (UHV) STM that has a coarse motion capability. A conducting diamond STM tip is used to create micron long scratches on Ge/GaAs or GaAs {001 }-type surfaces. These {001} surfaces are imaged with STM to observe scratch characteristics, and GaAs samples are cleaved to reveal {110}-type faces. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 129
Copyright
Copyright © Materials Research Society 1996

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References

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