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In situ and Ex situ Measurements of Stress Evolution in the Cobalt-Silicon System

Published online by Cambridge University Press:  14 March 2011

G. Lucadamo ,
C. Lavoie ,
C. Cabral Jr. ,
R. A. Carruthers  and
J.M.E. Harper
G. Lucadamo
Affiliation:
Lehigh University, Dept. of Materials Science and Engineering, Bethlehem, PA 18015
C. Lavoie
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
C. Cabral Jr.
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
R. A. Carruthers
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
J.M.E. Harper
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

The biaxial stress in Co thin-films has been investigated in situ by measuring changes in substrate curvature that occurred during deposition and annealing.Films of Co, 35 to 500 nm in thickness, were deposited by UHV magnetron sputtering at room temperature on Si (100) and poly-Si substrates.Results show that during Co deposition the bending force increased linearly with film thickness; a signature of constant stress.In addition, the stress evolution during silicide formation was measured under constant heating rate conditions from room temperature up to 700°C. The stress-temperature curve was correlated with Co2Si, CoSi, and CoSi2 phase formation using in situ synchrotron X-ray diffraction measurements.The room temperature stress for the CoSi2 phase was found to be ∼0.8 GPa (tensile) in the films deposited on Si (100) and ∼1 GPa (tensile) on the films deposited on poly-Si.The higher tensile stress in the poly-Si sample could be a result of Si grain growth during annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C6.3.1
Copyright
Copyright © Materials Research Society 2000

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References

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