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In Search of Metallic Nanowires on Si(001)

Published online by Cambridge University Press:  01 February 2011

Inder P. Batra ,
Bikash C. Gupta  and
Aakanksha A. Panjwani
Inder P. Batra
Affiliation:
Department of Physics, University of Illinois at Chicago, 845 West Taylor Street, Chicago, Illinois 60607-7059, USA
Bikash C. Gupta
Affiliation:
Department of Physics, University of Illinois at Chicago, 845 West Taylor Street, Chicago, Illinois 60607-7059, USA
Aakanksha A. Panjwani
Affiliation:
Department of Physics, University of Illinois at Chicago, 845 West Taylor Street, Chicago, Illinois 60607-7059, USA
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Abstract

Electronic structures of several atomic wires of metals like Al, Ga and In on hydrogen passivated Si(001):1×1 surface have been examined in search of nanowires with metallic properties. The dihydrogenated Si(001) is patterned by depassivating only one row of Si atoms along the [110] direction. Various structures of adsorbed metals and their electronic properties have been studied. With our present effort it was observed that Al and Ga nanowire configurations with metallic property are unstable towards the formation of buckled metal dimers leading to semiconducting behaviour. However, indium atomic wire is close to the metallic limit and shows marginal preference for the formation of symmetric dimers. It is encouraging that In metallic wires on a patterned dihydrogenated Si(001) may be realized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J18.29
Copyright
Copyright © Materials Research Society 2005

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References

1 Portal, D. S., Atacho, E., Junquera, J., Garcia, A., and Soler, J. M., Surf. Sci. 482-485, 1261 (2001).Google Scholar
2 Torres, J. A., Tosatti, E., Coros, A. D., Ercolessi, F., Kohanoff, J. J., Tolla, F. D. Di, and Soler, J. M., Surf. Sci. 426, L441 (1999).Google Scholar
3 Okamoto, M. and Takayanagi, K., Phys. Rev. B 60, 7808 (1999).Google Scholar
4 Hakkinen, H., Barnett, R. N., Landman, U., J. Phys. Chem. B 103, 8814 (1999)Google Scholar
5 Sen, P., Glseren, O., Yildirim, T., Batra, I. P., and Ciraci, S., Phys. Rev. B 65, 235433 (2002).Google Scholar
6 Batra, I. P., Phys. Rev. Lett. 63, 1704 (1989).Google Scholar
7 Watanabe, S., Ono, Y., Hashizume, T., and Wada, Y., Phys. Rev. B 54, R17308 (1996).Google Scholar
8 Watanabe, S., Ichimura, M., Onogi, T., and Ono, Y., Jpn. J. Appl. Phys., Part 2 36, L929 (1997)Google Scholar
9 Crain, J. N., McChesney, J. L., Zheng, Fan, Gallagher, M. C., Snijders, P. C., Bissen, M., Gundelach, C., Erwin, S. C., and Himpsel, F. J., Phys. Rev. B 69, 125401 (2004).Google Scholar
10 Gupta, B. C. and Batra, I. P., Phys. Rev. B 69, 165322 (2004).Google Scholar
11 Morita, Y. and Tokumoto, H., Appl. Phys. Lett. 67, 2654 (1995); J. Vac. Sci. Technol. A 14, 854 (1995).Google Scholar
12 Kresse, G. and Hafner, J., Phys. Rev. B 47, R558 (1993); G. Kresse and J. Furtmuller, ibid. 54, 11169 (1996).Google Scholar