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In pursuit of “super”high-k ternary oxides: aqueous CSD and material properties

Published online by Cambridge University Press:  01 February 2011

An Hardy ,
Sven Van Elshocht ,
Jan D'Haen ,
Stefan De Gendt ,
Marlies K. Van Bael ,
Marc Heyns ,
Marc D'Olieslaeger  and
Jules Mullens
An Hardy
Affiliation:
[email protected], Hasselt University, Chemistry, Agoralaan, building D, Diepenbeek, 3590, Belgium
Sven Van Elshocht
Affiliation:
[email protected], IMEC vzw, Heverlee, Leuven, 3001, Belgium
Jan D'Haen
Affiliation:
[email protected], Institute for Materials Research, Materials Physics group, Diepenbeek, 3590, Belgium
Stefan De Gendt
Affiliation:
[email protected], IMEC vzw, Heverlee, Leuven, 3001, Belgium
Marlies K. Van Bael
Affiliation:
[email protected], Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry group, Diepenbeek, 3590, Belgium
Marc Heyns
Affiliation:
[email protected], IMEC vzw, Heverlee, Leuven, 3001, Belgium
Marc D'Olieslaeger
Affiliation:
[email protected], IMEC, division IMOMEC, Diepenbeek, 3590, Belgium
Jules Mullens
Affiliation:
[email protected], Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry group, Diepenbeek, 3590, Belgium
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Abstract

Important material properties of dielectric oxide films fabricated by aqueous chemical solution deposition, such as crystallization, topography, contamination and interfacial layer were evaluated and related to the films' dielectric properties.

Functional ultrathin films (<20 nm thickness) of zirconia, barium zirconate and strontium niobate were deposited. The films were all subjected to the same thermal treatment, based on the high similarity of their precursors' thermal decomposition behavior. The evolution of the films' chemical purity as a function of temperature and the effect of annealing on the interfacial SiO2 layer was studied by grazing angle ATR-FTIR. The films' crystallization behavior was dependent on film thickness and composition as shown by high temperature XRD. C-V characterization of the films demonstrated a k-value in the same order of magnitude as for the ZrO2 reference material. This is lower than the bulk material's value, thus leaving room for further optimization of the current materials or alternatively selection of other material compositions.

Keywords

solution depositiondielectricsol-gel
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1073: Symposium H – Materials Science of High-k Dielectric Stacks—From Fundamentals to Technology , 2008 , 1073-H03-04
Copyright
Copyright © Materials Research Society 2008

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References

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