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Impurity-Induced Layer Disordering: Current Understanding and Areas for Future Investigation

Published online by Cambridge University Press:  25 February 2011

L.J. Guido  and
Nick Holonyak JR.
L.J. Guido
Affiliation:
Yale University, Department of Electrical Engineering, Center for Microelectronic Materials and Structures, P O Box 2157 Yale Station, New Haven, CT 06520
Nick Holonyak JR.
Affiliation:
University of Illinois, Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, Urbana, IL 61801
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Abstract

The purpose of this work is to give an overview of the current phenomenological understanding of impurity-induced layer disordering (IILD). First, we identify key experimental findings such as the influence of the crystal surface-ambient interaction, the Fermi-level effect, and the impurity concentration on Al-Ga interdiffusion. Second, we review the strengths and weaknesses of existing IILD models in consideration of the above mentioned experimental data. Finally, we discuss the pitfalls involved in generalizing the results of individual Al-Ga interdiffusion experiments in order to explain a broader collection of IILD data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 697
Copyright
Copyright © Materials Research Society 1990

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