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Impurity Segregation in Al Doped GaSb Studied by Cathodoluminescence Microscopy

Published online by Cambridge University Press:  10 February 2011

P. Hidalgo ,
B. Mendez ,
J. Piqueras  and
P.S. Dutta
P. Hidalgo
Affiliation:
Departamento de Fisica de Materiales, Facultad de Fisicas, Universidad Complutense, 29040 Madrid, Spain
B. Mendez
Affiliation:
Departamento de Fisica de Materiales, Facultad de Fisicas, Universidad Complutense, 29040 Madrid, Spain
J. Piqueras
Affiliation:
Departamento de Fisica de Materiales, Facultad de Fisicas, Universidad Complutense, 29040 Madrid, Spain
P.S. Dutta
Affiliation:
Department of Mechanical Engineering, Aeronautical Engineering & Mechanics, Rensselaer Polytechnic Institute, Troy, New York - 12180, USA
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Abstract

Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with an isoelectronic dopant, aluminum, on the native acceptors and on the general structure of extended defects of gallium antimonide single crystals. While there is no significant change in the native defect content, decoration of non-radiative recombination centers or extended defects occurs as a result of aluminum doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 639
Copyright
Copyright © Materials Research Society 1998

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References

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