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Impurity Gettering in MBE Grown Silicon

Published online by Cambridge University Press:  26 February 2011

A. Nylandsted Larsen ,
P. KringhØj ,
J. Lundsgaard Hansen  and
S. Yu. Shiryaev
A. Nylandsted Larsen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark
P. KringhØj
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark
J. Lundsgaard Hansen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark
S. Yu. Shiryaev
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark
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Abstract

A MBE growth procedure of epitaxial silicon layers is demonstrated which includes a special designed buried strained compositionally graded Si1−xGex layer. Upon thermal relaxation closed dislocation loops are formed in this Si1−xGex layer without altering the structure of the Si top layer. This dislocated layer is shown to getter contaminants in the Si top layer reducing the concentration of deep levels in this layer to ≈1 × 1012 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 285
Copyright
Copyright © Materials Research Society 1995

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References

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