Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T01:41:27.756Z Has data issue: false hasContentIssue false
  • English
  • Français

Impurity Contamination of GaN Epitaxial Films From the Sapphire, SiC and ZnO Substrates

Published online by Cambridge University Press:  10 February 2011

Galina Popovici ,
Wook Kim ,
Andrei Botchkarev ,
Haipeng Tang ,
James Solomon  and
Hadis Morkoç
Galina Popovici
Affiliation:
University of University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield Avenue, Urbana, IL 61801
Wook Kim
Affiliation:
University of University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield Avenue, Urbana, IL 61801
Andrei Botchkarev
Affiliation:
University of University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield Avenue, Urbana, IL 61801
Haipeng Tang
Affiliation:
University of University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 West Springfield Avenue, Urbana, IL 61801
James Solomon
Affiliation:
Dayton Research Institute, Dayton, OH 45469–0167
Hadis Morkoç
Affiliation:
Dayton Research Institute, Dayton, OH 45469–0167
Get access

Abstract

Likely contamination of GaN films by impurities emanating from Al2O3, SiC and ZnO substrates during growth has been studied by secondary ion mass spectrometry analysis. The highly defective interfacial region allows impurities to incorporate more readily as comparedjo the equilibrium solubility in a perfect crystal at a given temperature as evidenced by increased impurity levels in that region as detected by SIMS. The SIMS measurements in GaN layers grown on SiC and sapphire showed large amounts of Si and O, respectively, within a region wider than the highly disordered interfacial region pointing to the possibility of impurity diffusion at growth temperatures. The qualitative trend observed is fairly clear and significant. These observations underscores the necessity for developing GaN and/or AlN substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 3
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Morkoç, H. Progress and Prospects of Group-III Nitride Semiconductors, International Symposium on blue Lasers and Light Emitting Diodes, Chiba Univ., Japan, March 5–7, 1996, p. 23–29.Google Scholar
2. Mohammad, S. N., Salvador, A., and Morkoç, H., Emerging Gallium Nitride Devices, Proc. IEEE V. 83, 1306 (1995).Google Scholar
3. Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Burns, M., Large-band-gap SiC, III-V nitrides, and II-VI ZnSe-based Semiconductor Devices Technologies, J. Appl. Phys. 76, 1363 (1994).Google Scholar
4. Akasaki, I. and Amano, H., Current Status of III-V Nitride Research, International Symposium on blue Lasers and Light Emitting Diodes, Chiba Univ., Japan, March 5–7, 1996, p. 11–16.Google Scholar
5. Lei, T., Ludwig, K. F. Jr, and Moustakas, T., J. Appl. Phys. 74, 4430 (1993)Google Scholar
6. Lin, M. E., Strite, S., Agarwal, A., Salvador, A., Zhou, G. L., Teraguchi, N., Rocket, A. and Morkoç, H., Appl. Phys. Lett. 62, 702 (1993)Google Scholar
7. Ontani, A., Stevens, K. S., and Beresford, R., MRS Symp. Proc. v. 339, p. 471–476.Google Scholar
8. Yang, J. W., Kuznia, J. N., Chen, Q. C., Khan, M. A., George, T., De Graef, M., and Mahajan, M., Appl. Phys. Lett. 67, 3759 (1995)Google Scholar
9. Hamdani, F., Botchkarev, A., Kim, W., Morkoç, H., Yeadon, M., Gibson, J. M., Tsen, S.-C. Y., Smith, D. J., Reynolds, D. C, Look, D. C., Evans, K. and Litton, C. W., Appl. Phys. Lett. 70, 467 (1997)Google Scholar
10. Kim, W., Aktas, O., Botchkarev, A. E., Salvador, A., Mohammad, S. N. and Morkoç, H., J. Appl. Phys. 79, 7657(1996).Google Scholar
11. Zhu, Q., Botchkarev, A., Kim, W., Aktas, O., Salvador, A., Sverdlov, B., Morkoc, H., Tsen, S.-C.-Y., and Smith, D. J., Appl. Phys. Lett, 68, 1141 (1996)Google Scholar
12. Liliental - Weber, Z., Ruvimov, S., Suski, T., Ager, J. W. III, Swider, W., Chen, Y., Kisielowski, Ch., Washburn, J., Akasaki, I., Amano, H., Kuo, C., and Imler, W., MRS Symp. Proc. v. 423 (MRS, Pittsburg, PA, 1996) p. 487.Google Scholar