Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-29T07:43:24.359Z Has data issue: false hasContentIssue false
  • English
  • Français

Improving the Quality of a Heteroepitaxial CaF2 Overlayer by Rapid Post Annealing

Published online by Cambridge University Press:  25 February 2011

Loren Pfeiffer ,
Julia M. Phillips ,
T.P. Smith III ,
W. M. Augustyniak  and
K. W. West
Loren Pfeiffer
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T.P. Smith III
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. M. Augustyniak
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. W. West
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Get access

Abstract

We show that post anneals of short duration at high temperature can markedly improve the quality of CaF2 films grown by molecular beam epitaxy (MBE) on Si (100). Anneals at 1100°C for 20 sec in an Ar ambient improved χmin, the ratio of backscattered 1.8 MeV He4 ions in the aligned to random direction, from as-grown values of .07 to .26, to post post-anneal values of .03 to .045. This is the best χmin yet reported for the CaF2:Si system. The post-annealed films also show improved resistance to chemical etching and mechanical stress, and increased dielectric breakdown voltages.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 401
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Phillips, J. M., Paper D3.1 of this conference. Symposium on Layered Structures, Epitaxy and Interfaces.Google Scholar
2 This idea is somewhat similar in spirit to some recent RTA-damage removal experiments. See Seidel, T. E., Lischner, D. J., Pai, C. S., Knoell, R. V., and Maher, D. M. in Nucl. Instr. and Meths. March (1985). In that work there are also two competing processes with different activation energies. The intention is to use RTA to remove crystal damage by promoting Si to Si epitaxy, without bringing up the sample temperature long enough to allow substantial redistribution of an As dopant.Google Scholar
3 The Model AG Heatpulse 210 is manufactured by AG Associates, Inc., Pal Alto, CA 94303.Google Scholar
4 People, R., Smith, T. P., III, Phillips, J. M. and Augustyniak, W. M., Paper D3.5 of this conference. Symposium on Layered Structures, Epitaxy and Interfaces.Google Scholar