Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T07:23:26.112Z Has data issue: false hasContentIssue false
  • English
  • Français

Improvements on Electrical Properties of Ultra-Thin Silicon Oxides Grown by Microwave Afterglow Oxygen Plasma

Published online by Cambridge University Press:  15 February 2011

P. C. Chen ,
J. Y. Lin  and
H. L. Hwang
P. C. Chen
Affiliation:
Department of Electrical Engineeering, National Tsing Hua University, Hsin-chu, Taiwan 30043, R. O. C
J. Y. Lin
Affiliation:
Department of Electrical Engineering, Chung Cheng Institute of Technology, Ta-shi, Tao-yuan, Taiwan, ROC.
H. L. Hwang
Affiliation:
Department of Electrical Engineeering, National Tsing Hua University, Hsin-chu, Taiwan 30043, R. O. C
Get access

Abstract

Fundamental characteristics such as the oxide breakdown fields, oxide charges and interface state density of various ultra-thin silicon oxides (≤ 8 nm) grown by microwave plasma afterglow oxidation at low temperatures (400 °C and 600 °C) were investigated. The effective Oxide charge density of 600 °C as-grown oxide was as low as 6×1010 cm-2. The breakdown fields of the oxides were further enhanced and the interface state densities were reduced by employing fluorination (HF soaked) and low temperature N2O plasma annealing. The breakdown field of the thin oxide grown at 600 °C with 15 min N2O plasma annealing was 12 MV/cm. The reduction of interface state density was about 35% for 600 °C fluorinated oxide. When integrated with poly-gate process, the interface state density was as low as 5×1010 cm-2eV-1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 347: Symposium O – Microwave Processing of Materials IV , 1994 , 623
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Siejka, J. and Perriere, J., Phys. of Thin Films, 14, 81 (1989).Google Scholar
[2] Fu, C. Y., Mikkelsen, J. C. Jr, Schmitt, J., Abelson, J., Knights, J. C., Johnson, N., Barker, A. and Thompson, M. J., J. Electronic Mat., 14, 685 (1985).Google Scholar
[3] Sugano, T., Mat. Res. Soc. Sym. Proc. 38, 487 (1985).Google Scholar
[4] Seijka, J. and Perriere, J., Mat. Res. Soc. Sym. Proc, 38, 427 (1985).Google Scholar
[5] Ruzyllo, J., Hoff, A. and Ruggles, G., J. Electronic Mat., 16, 373 (1987).Google Scholar
[6] Nishioka, Y., da Silva, E. F. Jr, Wang, Y. and Ma, T. P., IEEE Electron Device Lett., 9, 38 (1988).Google Scholar
[7] Wright, P. J. and Sarawat, K. C., IEEE Tran. Electron Devices, 36, 879 (1989).Google Scholar
[8] Uhiyama, A., Fukuda, H., Hayashi, T., Iwabushe, T. and Ohno, S., IEDM Tech. Dig., 425 (1990).Google Scholar
[9] Hwang, H., Ting, W., Kwang, D. L. and Lee, J., IEDM Tech. Dig., 421 (1990).Google Scholar
[10] Meuris, M., Verhaverbeke, S., Mertens, P. W., Heyns, M. M., Hellemans, L., Bruynserade, Y. and Philipossian, A., Jpn. J. Appl. Phys. pt. 2., 31, L1514 (1992).Google Scholar
[11] Batey, J., Tierney, E. and Nguyen, T. N., IEEE Electron Device Lett., 8, 148 (1987).Google Scholar
[12] Vasquez, R. P. and Madhukar, A., Appl. Phys. Lett., 47, 998 (1985).Google Scholar