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Improvement of Wetting of Silicon on Insulator During Lamp Zone Melting Using Plasma Nitridation

Published online by Cambridge University Press:  28 February 2011

M. Haond ,
D. Dutartre ,
R. Pantel ,
A. Straboni  and
B. Vuillermoz
M. Haond
Affiliation:
Centre National d'Etudes des Téléommunications - CNS Chemin du Vieux Chine - B.P.: 98 - 38243 Meylan Cédex - France
D. Dutartre
Affiliation:
Centre National d'Etudes des Téléommunications - CNS Chemin du Vieux Chine - B.P.: 98 - 38243 Meylan Cédex - France
R. Pantel
Affiliation:
Centre National d'Etudes des Téléommunications - CNS Chemin du Vieux Chine - B.P.: 98 - 38243 Meylan Cédex - France
A. Straboni
Affiliation:
Centre National d'Etudes des Téléommunications - CNS Chemin du Vieux Chine - B.P.: 98 - 38243 Meylan Cédex - France
B. Vuillermoz
Affiliation:
Centre National d'Etudes des Téléommunications - CNS Chemin du Vieux Chine - B.P.: 98 - 38243 Meylan Cédex - France
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Abstract

In the preparation of SOI films by Zone Melting Recrystallization (ZMR) a cap layer is necessary to avoid the beading up of a silicon film when it is molten over silicon. This is a consequence of a bad wetting of liquid Si on SiO2. We report the successful application of a plasma nitridation treatment of the capping oxide. We compare the behaviour of the liquid silicon films during ZMR for different capping structures. The modification of the interface is investigated by using Auger analysis. We show that a range of nitrogen accumulation at the interface provides a good wetting.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 59
Copyright
Copyright © Materials Research Society 1986

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References

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