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Improvement of the interface quality between Zn (O,S,OH)x buffer and Cu(InGa)(SeS)2 surface layers to enhance the fill factor over 0.700

Published online by Cambridge University Press:  21 March 2011

K. Kushiva
Affiliation:
CIS Development Group, New Bussiness Development Div., Showa Shell Sekiyu K.K., 123-1, Shimo-kawairi, Atsugi, Kanagawa, JAPAN
Y. Tanaka
Affiliation:
CIS Development Group, New Bussiness Development Div., Showa Shell Sekiyu K.K., 123-1, Shimo-kawairi, Atsugi, Kanagawa, JAPAN
H. Hakuma
Affiliation:
CIS Development Group, New Bussiness Development Div., Showa Shell Sekiyu K.K., 123-1, Shimo-kawairi, Atsugi, Kanagawa, JAPAN
Y. Goushi
Affiliation:
CIS Development Group, New Bussiness Development Div., Showa Shell Sekiyu K.K., 123-1, Shimo-kawairi, Atsugi, Kanagawa, JAPAN
S. Kijima
Affiliation:
CIS Development Group, New Bussiness Development Div., Showa Shell Sekiyu K.K., 123-1, Shimo-kawairi, Atsugi, Kanagawa, JAPAN
T. Aramoto
Affiliation:
CIS Development Group, New Bussiness Development Div., Showa Shell Sekiyu K.K., 123-1, Shimo-kawairi, Atsugi, Kanagawa, JAPAN
Y. Fujiwara
Affiliation:
CIS Development Group, New Bussiness Development Div., Showa Shell Sekiyu K.K., 123-1, Shimo-kawairi, Atsugi, Kanagawa, JAPAN
A. Tanaka
Affiliation:
CIS Development Group, New Bussiness Development Div., Showa Shell Sekiyu K.K., 123-1, Shimo-kawairi, Atsugi, Kanagawa, JAPAN
Y. Chiba
Affiliation:
CIS Development Group, New Bussiness Development Div., Showa Shell Sekiyu K.K., 123-1, Shimo-kawairi, Atsugi, Kanagawa, JAPAN
H. Sugimoto
Affiliation:
CIS Development Group, New Bussiness Development Div., Showa Shell Sekiyu K.K., 123-1, Shimo-kawairi, Atsugi, Kanagawa, JAPAN
Y. Kawaguchi
Affiliation:
CIS Development Group, New Bussiness Development Div., Showa Shell Sekiyu K.K., 123-1, Shimo-kawairi, Atsugi, Kanagawa, JAPAN
K. Kakegawa
Affiliation:
CIS Development Group, New Bussiness Development Div., Showa Shell Sekiyu K.K., 123-1, Shimo-kawairi, Atsugi, Kanagawa, JAPAN
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Abstract

For realizing the proof of mass production capablity or a move toward a GW/a production, 16%-efficiency project has been started setting the target of each parameter as V∝: 0.685 V/cell, FF: 0.735 and Jsc: 31.8mA/cm2. Up to FY2008, the target of each parameter independently has been achieved expect the efficiency. All of our research by adjusting the two resistance (Rsh and Rs) in the monolithically integrated 30cm×30cm-sized circuits. To improve the FF, double buffer structure with CBD-Zn(O,S,OH)x and MOCVD-ZnO is proposed and the thickness is adjusted by optimizing the Rs and the Rsh. As the result, FF of over 0.7 has been achieved for the first time in our CIS R&D since FY 1993.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

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