Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-25T15:23:18.870Z Has data issue: false hasContentIssue false
  • English
  • Français

Improvement of Tft Characteristics by Using Controlled Grains

Published online by Cambridge University Press:  10 February 2011

F. Takeuchi ,
K. Suga ,
Y. Mishima  and
N. Sasaki
F. Takeuchi
Affiliation:
LCD Lab., Fujitsu Laboratories Ltd., 10–1 Morinosato-wakamiya, Atsugi, Kanagawa, JAPAN, [email protected]
K. Suga
Affiliation:
LCD Lab., Fujitsu Laboratories Ltd., 10–1 Morinosato-wakamiya, Atsugi, Kanagawa, JAPAN, [email protected]
Y. Mishima
Affiliation:
LCD Lab., Fujitsu Laboratories Ltd., 10–1 Morinosato-wakamiya, Atsugi, Kanagawa, JAPAN, [email protected]
N. Sasaki
Affiliation:
LCD Lab., Fujitsu Laboratories Ltd., 10–1 Morinosato-wakamiya, Atsugi, Kanagawa, JAPAN, [email protected]
Get access

Abstract

We fabricated TFTs on a glass substrate using poly-Si films crystallized by an excimer laser with a SiO2 capping pattern placed exactly on the channel regions. This process greatly improves the uniformity of the TFT characteristics compared to conventional excimer laser-crystallized poly-Si TFTs, because the capping pattern controls nucleation and produces grains that are aligned along the capping pattern. However, the average mobility produced by the capping method is not as good as that produced by the conventional method. This study clarified that a thermal gradient can control grain structure and is effective in achieving uniformity, and that the maximum temperature of molten Si must be increased to obtain higher mobility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 109
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Suga, K., Takeuchi, F., Takizawa, Y., Mishima, Y., and Okabe, M., Digest of AM-LCD97, 159 (1997).Google Scholar
2. Choi, D. H., Shimizu, K., Sugiura, O., and Matsumura, M., Jpn. J. Appl. Phys. 31, 4545(1992).Google Scholar
3. Kim, H. J. and Im, J. S., Appl. Phys. Lett. 68, 1513(1996).Google Scholar
4. Sposili, R. S. and Im, J. S., Appl. Phys. Lett. 69, 2864(1996).Google Scholar
5. Oh, C. H., Ozawa, M., and Matsumura, M., Jpn. J. Appl. Phys. 37, L492 (1998).Google Scholar
6. Ishihara, R. and Burtsev, A., Jpn. J. Appl. Phys. 37, 1071(1998).Google Scholar
7. Hara, A. and Sasaki, N., Digest of AM-LCD99, 275 (1999).Google Scholar
8. Sameshima, T., Usui, S., J. Appi. Phys. 70 (3), 1281 (1991)Google Scholar