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Improvement of Brightness & Threshold-Current in Visible-Light a-Sic:H Thin Film Led by Using Metal Sheet Substrate

Published online by Cambridge University Press:  16 February 2011

Wirote Boonkosum ,
Dusit Kruangam ,
Somsak Panyakeow  and
Bancherd DeLong
Wirote Boonkosum
Affiliation:
Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand.
Dusit Kruangam
Affiliation:
Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand.
Somsak Panyakeow
Affiliation:
Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand.
Bancherd DeLong
Affiliation:
Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand.
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Abstract

An effort has been made to improve the brightness of the a-SiC:H Thin Film LED (TFLED) by using highly-thermal conductive Metal (SUS) sheet substrates instead of glass substrates. The structure of the TFLED is metal substrate/n a-SiC:H/i a-SiC:H/p a-SiC:H/ITO. The results from the preliminary examination show that at room temperature; 1) the threshold current necessary for the observation of the emission for the TFLED deposited on a SUS substrate is half of that for a glass substrate, 2) the highest brightness is about 5 cd/m2 for a SUS substrate while about 1 cd/m2 for a glass substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 849
Copyright
Copyright © Materials Research Society 1994

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References

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