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Improvement in Ferroelectric Properties of Sol-Gel Derived SrBi2Ta2O9 thin films with seeding layers

Published online by Cambridge University Press:  01 February 2011

Ching-Chich Leu ,
Chao-Hsin Chien ,
Ming-Jui Yang ,
Ming-Che Yang ,
Tiao-Yuan Huang ,
Hung-Tao Lin  and
Chen-Ti Hu
Ching-Chich Leu
Affiliation:
National Nano Device Laboratories, Hsinchu 30043, Taiwan, ROC
Chao-Hsin Chien
Affiliation:
National Nano Device Laboratories, Hsinchu 30043, Taiwan, ROC
Ming-Jui Yang
Affiliation:
National Nano Device Laboratories, Hsinchu 30043, Taiwan, ROC
Ming-Che Yang
Affiliation:
National Nano Device Laboratories, Hsinchu 30043, Taiwan, ROC
Tiao-Yuan Huang
Affiliation:
National Nano Device Laboratories, Hsinchu 30043, Taiwan, ROC
Hung-Tao Lin
Affiliation:
National Nano Device Laboratories, Hsinchu 30043, Taiwan, ROC Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, ROC
Chen-Ti Hu
Affiliation:
National Nano Device Laboratories, Hsinchu 30043, Taiwan, ROC Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, ROC
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Abstract

The effects of a seeding layer, which was deposited on Pt/TiO2/SiO2/Si substrates using magnetron sputtering, on the characteristics of sol-gel-deposited strontium-bismuth-tantalate (SBT) thin films are investigated. The seeding layer serves as nucleation sites so homogeneous crystalline SBT films of bismuth-layered structure (BLS) with fine grains are successfully obtained by 750°C rapid thermal annealing in O2 ambient. The remanent polarization (2Pr) improves from 12.1 to 18.8 μC/cm2 with the addition of the seeding layer. In addition, the seeding layer also results in a lower nucleation temperature, allowing the use of 700°C annealing for 10 min to grow SBT films that are fully crystallized with BLS phase and shows good ferroelectric properties. Finally, crystallinity and microstructures of SBT films are found to be strongly dependent on the thickness of the seeding layer. Optimum Ta-seeded SBT thin film crystallized at 700°C for 10min depicts a higher 2Pr value (12.9 μC/cm2 (@5V) than that of the un-seeded films crystallized at 750°C for 1min.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 718: Symposium D – Perovskite Materials , 2002 , D10.11
Copyright
Copyright © Materials Research Society 2002

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References

1. Ishinose, N., and Watanabe, M., Jpn. J. Appl. Phys., Part 1 36, 5893 (1997).Google Scholar
2. Tabata, H., Tanaka, H., and Kiwai, T., Jpn. J. Appl. Phys., Part 1 34, 5146 (1995).Google Scholar
3. Oishi, Y., Matsumuro, Y., and Okuyama, M., Jpn. J. Appl. Phys., Part 1 36, 5896 (1997).Google Scholar
4. Koiwa, I., Kanehara, T., Mita, J., Iwabuchi, T., Osaka, T., and Ono, S., Jpn. J. Appl. Phys., Part 1 36, 1597 (1997).Google Scholar
5. Leu, C. C., Yang, M. C., Hu, C. T., Chien, C. H., Yang, M. J., and Huang, T. Y., Appl. Phys. Lett. 79, 3833 (2001).Google Scholar
6. Osaka, T., Yoshie, T., Hoshika, T., Koiwa, I., Sawada, Y., and Hashinoto, A., Jpn. J. Appl. Phys., Part 1 39, 5476 (2000).Google Scholar
7. Shin, W. C., and Yoon, S. G., Appl. Phys. Lett. 79, 1519 (2001).Google Scholar
8. Chen, K. C. and Mackenzie, J. D., Mater. Res. Soc. Symp. Proc. 180, 663 (1990).Google Scholar
9. Ishikawa, K., Sakura, K., Fu, D., Yamada, S., Suzuki, H., and Hayashi, T., Jpn. J. Appl. Phys., Part 1 37, 5128 (1998).Google Scholar
10. Muralt, P., Maeder, T., Sagalowicz, L., Hiboux, S., Scalese, S., Naumovic, D., Agostino, R. G., Xanthopoulos, N., Mathieu, H. J., Patthey, L., and Bullock, E. L., J. Appl. Phys. 83, 3835 (1998).Google Scholar
11. Bouregba, R., Poullain, G., Vilquin, B., and Murray, H., Mater. Res. Bull. 35, 1381 (2000).Google Scholar
12. Aoki, K., Fukuda, Y., Numata, K., Nishimura, A., Jpn. J. Appl. Phys., Part 1 34, 192 (1995).Google Scholar
13. Fukuda, Y., Aoki, K., Jpn. J. Appl. Phys., Part 1 36, 5793 (1997).Google Scholar
14. Kim, S. T., Kim, H. H., Lee, M. Y., Lee, W. J., Jpn. J. Appl. Phys., Part 1 36, 294 (1997).Google Scholar
15. Li, X. S., Tanaka, T., and Suzuki, Y., Vacuum 59, 800 (2000).Google Scholar
16. Ohring, M., The Materials Science of Thin Film, Academic Press (1992).Google Scholar
17. Ren, S. B., Lu, C. J., Shen, H. M., and Wang, Y. N., Phys. Rev. B 54, R14 337 (1996); 55, 3485 (1997).Google Scholar