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Improvement in a-Si:H Properties by Inert Gas Plasma Treatment

Published online by Cambridge University Press:  10 February 2011

E. Maruyama ,
Y. Hishikawa ,
M. Tanaka ,
S. Kiyama  and
S. Tsuda
E. Maruyama
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
Y. Hishikawa
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
M. Tanaka
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
S. Kiyama
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
S. Tsuda
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
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Abstract

The modification of surface reactions with an inert gas plasma treatment method has been investigated for the first time in order to improve the properties of a-Si:H for solar cells. The deposition of a thin a-Si:H layer and exposure to inert gas plasma such as He, Ar or Xe were repeated by using RF plasma CVD at a substrate temperature of 200 °C. It has been found that the hydrogen content (CH) can be controlled in a wide range from about 18 atomic% to about 35 atomic%, although it is a hydrogen-free process. Experimental results show that the change in CH of a-Si:H films is mainly determined by the decrease in CH of the treated a-Si:H surface and the increase in CH of the a-Si:H deposited on the treated surface. Furthermore, the plasma treatment probably promotes the surface reaction, which reduces SiH2ISiH and CH. Consequently, wide-gap (1.64 eV by ( a h ν )1/3 versus h ν plots, 1.75 - 1.85 eV by Tauc's plot) a-Si:H films with high stabilized photoconductivity (> 10-5 Ω-1cm-1 under AM-1, 100 mW/cm2 irradiation) have been obtained by the inert gas plasma treatment method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 329
Copyright
Copyright © Materials Research Society 1996

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References

1) Hishikawa, Y., Ninomiya, K., Maruyama, E., Kuroda, S., Terakawa, A., Sayama, K., Tarui, H., Sasaki, M., Tsuda, S. and Nakano, S., Proc. First WCPEC., Hawaii 484 (1994).Google Scholar
2) Nakamura, N., Takahama, T., Isomura, M., Nishiwaki, M., Yoshida, K., Tsuda, S., Nakano, S., Ohnishi, M. and Kuwano, Y., Jpn. J. Appl. Phys. 28, 1762 (1989).Google Scholar
3) Bhattacharya, E. and Mahan, A. H., Appl. Phys. Lett. 52, 1587 (1988).Google Scholar
4) Hishikawa, Y., Tsuda, S., Wakisaka, K. and Kuwano, Y., J. Appl. Phys. 73, 4227 (1993).Google Scholar
5) Okamoto, S., Hishikawa, Y. and Tsuda, S., Jpn. J. Appl, Phys. 35, 26 (1996).Google Scholar
6) Shirai, H., Hanna, J. and Shimizu, I., Jpn. J. Appl. Phys. 30, L881 (1991).Google Scholar
7) Gallagher, A., Mater. Res. Soc. Symp. Proc. 70, 3 (1986).Google Scholar
8) Brodsky, M., Cardona, M., and Cuomo, J., Phys. Rev. B 16, 3556 (1977).Google Scholar
9) Maley, N. and Szafranek, I., Mater. Res. Soc. Symp. Proc. 192, 663 (1986).Google Scholar
10) Hishikawa, Y., Nakamura, N., Tsuda, S., Nakano, S., Kishi, Y. and Kuwano, Y., Jpn. J. Appl. Phys. 30, 1008 (1991).Google Scholar
11) Okamoto, S., Hishikawa, Y., Tsuge, S., Sasaki, M., Ninomiya, K., Nishikuni, M. and Tsuda, S., Jpn. J. Appl. Phys. 33, 1773 (1994).Google Scholar