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Improved Thin Film Transistor (TFT) performance using fractionated Poly-3-hexylthiophene (P3HT)

Published online by Cambridge University Press:  15 March 2011

Munira Raja ,
Giles Lloyd ,
Naser Sedghi ,
Rafaella di Lucrezia ,
Simon J. Higgins  and
W. Eccleston
Munira Raja
Affiliation:
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK
Giles Lloyd
Affiliation:
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK
Naser Sedghi
Affiliation:
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK
Rafaella di Lucrezia
Affiliation:
Department of Chemistry University of Liverpool, Liverpool L69 3BX, UK
Simon J. Higgins
Affiliation:
Department of Chemistry University of Liverpool, Liverpool L69 3BX, UK
W. Eccleston
Affiliation:
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK
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Abstract

By using the Trznadel method, it has been possible to increase molecular weight, the regio-regularity, and probably to decrease the residual catalyst of poly-3-hexylthiophene thin films. The drift mobility of holes, normal to the surface of cast films, in air, has been found using Schottky diodes, and field-effect mobility has been measured with Thin-Film Transistors. Three types of film have been studied using the two methods of assessing mobility. The as-synthesised films are compared with those that have been fractionated. The third set of films involves doping with 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ). The doped films show a field effect mobility of 0.2 cm2V-1s-1: all others being lower. Field effect mobility is approximately two orders of magnitude greater than that in the bulk normal to the plane of the film. Doping levels in the films are found to be similar, probably because of the process conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 708: Symposium BB – Organic Optoelectronic Materials, Processing and Devices , 2001 , BB10.56
Copyright
Copyright © Materials Research Society 2002

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References

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