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Improved Stability of Hydrogenated Amorphous Silicon Solar Cells Fabricated by Triode-Plasma CVD

Published online by Cambridge University Press:  01 February 2011

H. Sonobe ,
A. Sato ,
T. Fujibayashi ,
S. Shimizu ,
T. Matsui ,
A. Matsuda  and
M. Kondo
H. Sonobe
Affiliation:
Nagasaki Research and Development Center, Mitsubishi Heavy Industries, Japan National Institute of Advanced Industrial Science and Technology, Japan
A. Sato
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan
T. Fujibayashi
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan
S. Shimizu
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan
T. Matsui
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan
A. Matsuda
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan
M. Kondo
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan
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Abstract

We have employed a triode-type plasma CVD system to fabricate highly stabilized hydrogenated amorphous silicon (a-Si:H) solar cells. The p-i-n type solar cells were fabricated on a textured SnO2/glass substrate (ASAHI VU type). By applying a triode system, the Si-H2 bond density in the film decreased to about one third (from 1.7 at.% for conventional parallel-plate-electrode to 0.6 at.% for a triode configuration), and correspondingly the degradation ratio decreased from 13 % to 10 %. We have achieved the degradation ratio of 5 % by optimizing the player deposition conditions. In case of a triode system, there were minor effects of higher hydrogen dilution in the stabilized efficiency. We have experimented the effects of the substrate temperature for a higher stabilized efficiency. Further improvement in solar efficiency has been made by applying antireflection layers to air/glass and TCO/p interfaces. As a result, we have achieved the stabilized efficiency of 9.22 % (Jsc = 15.9 mA/cm2, Voc = 0.863 V, FF = 0.672) with a degradation ratio of 7.8 %. We have also employed the triode-deposited a-Si:H solar cell to a tandem type solar cell with a structure of a-Si:H/hydrogenated microcrystalline silicon (μc-Si:H). We have achieved the stabilized efficiency of 10.9 % (Jsc = 12.0 mA/cm2, Voc = 1.31 V, FF = 0.691) with a degradation ratio of 7.3 %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A11.1
Copyright
Copyright © Materials Research Society 2005

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References

1 Staebler, D. L., Wronski, C. R., Appl. Phys. Lett. 31(4)(1977)292.10.1063/1.89674Google Scholar
2 Okamoto, S., Hishikawa, Y., Tsuda, S., Jpn. J. Appl. Phys. 35(1996)pp.26.10.1143/JJAP.35.26Google Scholar
3 Shimizu, S., Miyahara, H., Kondo, M., Matsuda, A., J. Non-Cry. Solids. 338-340(2004)47 10.1016/j.jnoncrysol.2004.02.019Google Scholar
4 Nakamura, N., Takahama, T., Isomura, M., Nishikuni, M., Yoshida, K., Tsuda, S., Nakano, S., Ohnishi, M., Kuwano, Y., Jpn. J. Appl. Phys. 28(1989)pp.1762.10.1143/JJAP.28.1762Google Scholar
5 Bhattachrya, E., Mahan, A. H., Appl. Phys. Lett. 52(19)(1988)1587.10.1063/1.99089Google Scholar
6 Shimizu, S., Shimosawa, M., Miyahara, H., Kondo, M., Matsuda, A., Proc. of WCPEC-3, B(2003)pp1615.Google Scholar
7 Nishimoto, T., Takai, M., Miyahara, H., Kondo, M., Matsuda, A., J. Non-Cry. Solids. 299-302(2002)pp.1116.10.1016/S0022-3093(02)00942-0Google Scholar
8 Fujiwara, H., Kondo, M. and Matsuda, A., J. Appl. Phys. 91(2002)pp.4181 10.1063/1.1457535Google Scholar
9 Shimizu, S., Kondo, M. and Matsuda, A., In Technical Digest of the 14th Intern. Photovoltaic Science and Engineering Conf. (PVSEC-14), Thailand, (2004)649 Google Scholar
10 Isomura, M., Kondo, M. and Matsuda, A., Jpn. J. Appl. Phys. 39(2000)pp.3339.10.1143/JJAP.39.3339Google Scholar
11 Nasuno, Y., Kondo, M. and Matsuda, A., Appl. Phys. Lett. 78(16)(2001)2330 10.1063/1.1364657Google Scholar
12 Nasuno, Y., Kondo, M., Matsuda, A., Fukuhori, H. and Kanemitsu, Y., Appl. Phys. Lett. 81(17)(2002)3155 10.1063/1.1514396Google Scholar
13 Matsui, T., Fujibayashi, T., Nasuno, Y., Fukuhori, H., Kanemitsu, Y., Kondo, M. and Matsuda, A., Proc. of 3rd-WCPEC, (2003)1831 Google Scholar