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Improved Spectral Response of Quantum Dot Solar Cells Using InAs Multi-stack High Density Quantum Dot Molecules

Published online by Cambridge University Press:  01 February 2011

Ong-arj Tangmettajittakul ,
P Changmoang ,
Supachok Thainoi ,
Pornchai Changmoang ,
Songphol Kanjanachuchai ,
Somchai Rattanathammaphan  and
Somsak Panyakeow
Ong-arj Tangmettajittakul
Affiliation:
[email protected], Chulalongkorn University, Electrical engineering, Bangkok, Bangkok, Thailand
Supachok Thainoi
Affiliation:
[email protected], Chulalongkorn University, Electrical engineering, Bangkok, Thailand
Pornchai Changmoang
Affiliation:
[email protected], Chulalongkorn University, Electrical engineering, Bangkok, Thailand
Songphol Kanjanachuchai
Affiliation:
[email protected], Chulalongkorn University, Electrical engineering, Bangkok, Thailand
Somchai Rattanathammaphan
Affiliation:
[email protected], Chulalongkorn University, Electrical engineering, Bangkok, Thailand
Somsak Panyakeow
Affiliation:
[email protected]
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Abstract

In this paper, we report the spectral response measurement of Schottky solar cells with conventional quantum dots (QDs) and high-density quantum dot molecules (HD-QDMs) as active layers. 3-stack HD-QDMs Schottky structure is compared to 15-stack QD Schottky structure and control sample without QDs. 15-stack conventional InAs QDs give narrow response peak centered at 907 nm while 3-stack InAs HD-QDMs give broad peak between 915 and 985 nm. Both spectral responses are extended beyond the band edge of GaAs, i.e. 870 nm. 42 % more photovoltaic power could be evident from the extended spectral response curve comparing to that of GaAs bulk sample without dots.

Keywords

photovoltaicmolecular beam epitaxy (MBE)III-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1260: Symposium T – Photovoltaics and Optoelectronics from Nanoparticles , 2010 , 1260-T10-38
Copyright
Copyright © Materials Research Society 2010

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