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Improved SiC Epitaxial Material for Bipolar Applications

Published online by Cambridge University Press:  01 February 2011

Peder Bergman ,
Jawad ul Hassan ,
Alex Ellison ,
Anne Henry ,
Philippe Godignon ,
Pierre Brosselard  and
Erik Janzén
Peder Bergman
Affiliation:
[email protected], Linköping University, Physics, Chemistry and Biology,, IFM, Linköping, SE, Sweden, +46 13 282382
Jawad ul Hassan
Affiliation:
[email protected], Linköping University, Department of Physics, Chemistry and Biology, IFM, Linköping, SE-581 83, Sweden
Alex Ellison
Affiliation:
[email protected], Norstel AB, Ramshällsvägen, Norköping, S-60116, Sweden
Anne Henry
Affiliation:
[email protected], Linköping University, Department of Physics, Chemistry and Biology, IFM, Linköping, SE-581 83, Sweden
Philippe Godignon
Affiliation:
[email protected], CNM-IMB-CSIC, Campus UAB, Bellaterra, Barcelona, ES-08193, Spain
Pierre Brosselard
Affiliation:
[email protected], CNM-IMB-CSIC, Campus UAB, Bellaterra, Barcelona, ES-08193, Spain
Erik Janzén
Affiliation:
[email protected], Linköping University, Department of Physics, Chemistry and Biology, IFM, Linköping, SE-581 83, Sweden
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Abstract

Epitaxial growth on Si-face nominally on-axis 4H-SiC substrates has been performed using horizontal Hot-wall chemical vapor deposition system. The formation of 3C inclusions is one of the main problem with growth on on-axis Si-face substrates. In situ surface preparation, starting growth parameters and growth temperature are found to play a vital role in the epilayer polytype stability. High quality epilayers with 100% 4H-SiC were obtained on full 2″ substrates. Different optical and structural techniques were used to characterize the material and to understand the growth mechanisms. It was found that the replication of the basal plane dislocation from the substrate into the epilayer can be eliminated through growth on on-axis substrates. Also, no other kind of structural defects were found in the grown epilayers. These layers have also been processed for simple PiN structures to observe any bipolar degradation. More than 70% of the diodes showed no forward voltage drift during 30 min operation at 100 A/cm2.

Keywords

epitaxychemical vapor deposition (CVD) (deposition)electrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D05-01
Copyright
Copyright © Materials Research Society 2008

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References

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