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Improved Resistive Switching Properties in HfO2-based ReRAMs by Hf/Au Doping

Published online by Cambridge University Press:  21 March 2012

Xiaoli He ,
Natalya A. Tokranova ,
Wei Wang  and
Robert E. Geer
Xiaoli He
Affiliation:
College of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203
Natalya A. Tokranova
Affiliation:
College of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203
Wei Wang
Affiliation:
College of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203
Robert E. Geer
Affiliation:
College of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203
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Abstract

Emerging NVM devices have been extensively studied as candidates to extend density scaling and power reduction beyond Si-based flash. Recently, resistive-random-access-memory (ReRAM) devices in the form of metal-insulator-metal (MIM) structures have attracted substantial attention due to their potential scalability, low power operation, and high speed. HfO2 is attractive compared to other transition metal oxides from the vantage point of CMOS process compatibility. Here, we investigate doped HfO2 with a Pt top electrode on an n+-Si substrate. By doping HfO2 with Hf or Au, improved resistive switching properties have been demonstrated in terms of enhanced cycling endurance and lower switching voltages for SET and RESET. The improvements were attributed to doping-induced oxygen vacancies. In addition, Cu-doped HfO2 devices have exhibited multilevel resistive switching.

Keywords

oxidememoryelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1394: Symposium M – Oxide Semiconductors–Defects, Growth and Device Fabrication , 2012 , mrsf11-1394-m03-31
Copyright
Copyright © Materials Research Society 2012

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