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Improved Meltback Procedures for Liquid-Phase-Epitaxial Growth of Planar and Buried Heterostructures

Published online by Cambridge University Press:  15 February 2011

B. H. Chin ,
A. K. Chin ,
M. A. Digiuseppe ,
I. A. Lourenco  and
I. Camlibel
B. H. Chin
Affiliation:
Bell Laboratories, Murray Hill, New Jersey
A. K. Chin
Affiliation:
Bell Laboratories, Murray Hill, New Jersey
M. A. Digiuseppe
Affiliation:
Bell Laboratories, Murray Hill, New Jersey
I. A. Lourenco
Affiliation:
Bell Laboratories, Murray Hill, New Jersey
I. Camlibel
Affiliation:
Bell Laboratories, Murray Hill, New Jersey
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Abstract

In the liquid phase epitaxy on indium phosphide, the substrate,just prior to the growth of the first epitaxial layer, is commonly etched back with an indium melt to remove any thermallydegraded surface and to ensure uniform and consistent wetting.This procedure, however, often produces defects which degrade both planar and buried heterostructure devices. For planar edgeemitters and lasers, the resulting rippled surface morphology degrades device performance by scattering light. For buried heterostructures, the meltback in the regrowth step leads to indium-rich inclusions. The effects of meltback on material quality are presented, and a new multiple meltback procedure which maintains flat surface morphology and eliminates inclusions is described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 277
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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