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Improved Light Soaking Stability of R.F. Sputter Deposited Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

A. Wynveen ,
J. Fan ,
J. Kakalios  and
J. Shinar
A. Wynveen
Affiliation:
School of Physics and Astronomy, The University of Minnesota, Minneapolis, MN 55455
J. Fan
Affiliation:
School of Physics and Astronomy, The University of Minnesota, Minneapolis, MN 55455
J. Kakalios
Affiliation:
School of Physics and Astronomy, The University of Minnesota, Minneapolis, MN 55455
J. Shinar
Affiliation:
Ames Laboratory - U. S. DOE and Physics Dept., Iowa State University, Ames IA 50011
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Abstract

Studies of r.f. sputter deposited hydrogenated amorphous silicon (a-Si:H) find that the light induced decrease in the dark conductivity and photoconductivity (the Staebler-Wronski effect) is reduced when the r.f. power used during deposition is increased. The slower Staebler-Wronski effect is not due to an increase in the initial defect density in the high r.f. power samples, but may result from either the lower hydrogen content or the smaller optical gap found in these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 105
Copyright
Copyright © Materials Research Society 1991

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References

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