Hostname: page-component-6bf8c574d5-9nwgx Total loading time: 0 Render date: 2025-02-18T05:46:00.656Z Has data issue: false hasContentIssue false
  • English
  • Français

Improved interface between front TCO and microcrystalline silicon p-i-n solar cells.

Published online by Cambridge University Press:  17 March 2011

E. Vallat-Sauvain ,
S. Faÿ ,
S. Dubail ,
J. Meier ,
J. Bailat ,
U. Kroll  and
A. Shah
E. Vallat-Sauvain
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
S. Faÿ
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
S. Dubail
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
J. Meier
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
J. Bailat
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
U. Kroll
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
A. Shah
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
Get access

Abstract

The microstructure of microcrystalline silicon p-layers on zinc oxyde (ZnO) has been studied by Transmission Electron Microscopy (TEM). ZnO has been characterised by X-Rays diffraction and by Scanning Electron Microscopy (SEM). These reveal that the ZnO surface topography consists of regular pyramids with a (110) preferential crystallographic growth axis. High Resolution TEM observations indicate that the p- layer growth starts at the top of the ZnO pyramids. This results, for fully microcrystalline p-layers, in a decreased thickness at the bottom of the ZnO pyramids. When the p-layer is fully microcrystalline, no amorphous incubation layer could be observed between ZnO and p-silicon layer. Moreover, the high crystallinity of the p-layers in microcrystalline p-i-n devices is accompanied by an increased fill-factor in the I-V characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A15.3
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Meier, J., Flückiger, R., Keppner, H., Shah, A., Appl. Phys. Lett. 65, p. 860 (1994).Google Scholar
[2] Meier, J., Dubail, S., Flückiger, R., Fischer, D., Keppner, H., Shah, A., Proc. of 1st WCPEC, p. 409, (1994).Google Scholar
[3] Meier, J., Vallat-Sauvain, E., Dubail, S., Kroll, U., Dubail, J., Golay, S., Feitknecht, L., Torres, P., Fay, S., Fischer, D. and Shah, A., to be publ. in Solar Energy Mat. and Solar Cells (presented at PVSEC-11, 1999).Google Scholar
[4] Vallat-Sauvain, E., Kroll, U., Meier, J., Shah, A., J. Appl. Phys. 87, p. 3137 (2000).Google Scholar
[5] Vallat-Sauvain, E., Kroll, U., Meier, J., Wyrsch, N. and Shah, A., J. Non-Cryst. Solids, Vol. 266–269, pp. 125–130 (2000).Google Scholar
[6] Yamamoto, H., Isomura, M., Kondo, M. and Matsuda, A., Techn. Digest of PVSEC-11, p. 231, (1999).Google Scholar
[7] Houben, L., Luysberg, M., Hapke, P., Carius, R., Finger, F. and Wagner, H., Phil. Mag. A 77(6), pp. 1447–1460, (1998).Google Scholar
[8] Dubail, J., Vallat-Sauvain, E., Meier, J., Dubail, S. and Shah, A., Mat. Res. Soc. Proc. Vol. 609, A13.6.1, 2000.Google Scholar
[9] Koh, J., Lee, Y., Fujwara, H., Wronski, C.R., Collings, R.W., Appl. Phys. Lett. 73, p. 1526 (1998).10.1063/1.122194Google Scholar
[10] Nasuno, Y., Kondo, M. and Matsuda, A., to be publ. in the Proceeding og the 3rd World Conference on Photovoltaic Energy Conversion, Anchorage, September 2000 Google Scholar
[11] Faÿ, S., Dubail, S., Kroll, U., Meier, J., Ziegler, Y., Shah, A., to be publ. In Proceedings of the 16th EU Photovoltaic Solar Energy Conference, Glasgow, UK, May 2000 Google Scholar
[12] Benedict, J., Anderson, R. and Klepeis, S.J., Met. Res. Soc. Symp. Proc. Vol. 254, pp.121–140 (1992)Google Scholar
[13] JCPDS powder diffraction file 27-1402 for Si and 36-1451 for ZnO (International center for diffraction data, Swarthmore, PA 19081-2389, U.S.A)Google Scholar
[14] Flückiger, R., Meier, J., Keppner, H., Götz, M., A. Shah Proc. Of 23rd IEEE PVSC, 839 (1993) and R. Flückiger, J. Meier, A. Shah, A. Catana, M. Brunel, H.V Nguyen, R.W. Collings, R. Carius, Mat. Res. Soc. Symp. Proc. 336, p. 511 (1994)Google Scholar