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Improved Crystal Perfection in Zone-Recrystallized Si Films on Sio2

Published online by Cambridge University Press:  25 February 2011

Loren Pfeiffer ,
K. W. West ,
Scott Paine  and
D. C. Joy
Loren Pfeiffer
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ07974
K. W. West
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ07974
D. C. Joy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ07974
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Abstract

We review recent results of our Graphite Strip Heater Si-on-Insulator (SOI) effort: (i) recrystallization of SOI films on 100 mm wafers, (ii) model of subboundary pattern formation in SOI films, (iii) low defect density SOI films by ultra slow scanning of the melt zone, (iv) low defect density SOI films by patterned openings in the cap oxide overlayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 583
Copyright
Copyright © Materials Research Society 1985

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References

1. Pfeiffer, L., Celler, G. K., Kovacs, T., and Robinson, McD., Appl. Phys. Letts. 43, 1048 (1983).Google Scholar
2. Schimmel, D. G., J. Electrochem. Soc. 126, 479 (1979).Google Scholar
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7. The group at MIT Lincoln Labs appears to see similar etching behavior in certain of their SOI films. See the paper by Geis, M. W. et al. , in this symposium volume.Google Scholar
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